SIMS 4550

High depth resolution and high throughput
With ever shrinking device dimensions, the implant profiles and layer thickness of today’s semiconductors are often in the range of 1-10nm. The SIMS 4550 has been optimized to address these application fields by offering oxygen and cesium high density primary beam with an impact energy programmable from 5keV down to less than 150eV.

Flexibility
CAMECA’s SIMS 4550 is a dynamic SIMS tool offering full flexibility in sputter conditions (impact angle, energy, species). With dedicated options for charge compensation (electron gun, laser) during sample sputtering, insulating materials can be easily analyzed. The SIMS 4550 measures layer thickness, alignment, abruptness, integrity, uniformity and stoechiometry. Sample holders can accommodate a variety of samples: small pieces of a few mm² up to 100mm diameter sample size.

High precision and automation
State-of-the-art quadrupole analyzer optics and superior peak to background performance are key factors for low detection limits for trace elements. The SIMS 4550 offers excellent sensitivity for H, C, N and O thanks to its advanced UHV design with main chamber pressure in the low E-10mbar (E-8Pa) range. Ultra stable ion sources and electronics ensure highest precision and repeatability of measurements down to < 0.2% RSD.
The human factor on precision is well taken into consideration by easy-to-use software, predefined recipes, remote operation and trouble shooting. All instrument settings of each measurement are stored in a database. Repeated measurements are therefore only a few mouse clicks away. Further automation features

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Please email cameca.info@ametek.com

Monitoring of rapid thermal anneal with secondary ion mass spectrometry. Z. X. Jiang, A. Ravi, T. Breeden, K. Khmelnitskiy, A. Duncan, D. Huynh, S. Butler, B. Granados, D. Acker, J. Luebbe, D. Sieloff, S. Bolton, and G. Prieto. J. Vac. Sci. Technol. B 42, 034007 (2024)
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Automation, Electronics, Electrical Engineering and Space Technologies. R Bogdanowicz. Doctoral defense (2024)
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Surface passivation in c-Si solar cells via a double-barrier quantum-well structure for ameliorated performance. Muhammad Quddamah Khokhar, Jaeun Kim, Ziyang Cui, Sungjin Jeong, Sungheon Kim, Rajiv Kumar Pandey, Eun-Chel Cho, Junsin Yi. Applied Surface Science 607 (2023) 155082
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Front-side and back-side secondary ion mass spectrometry analyses on advanced doping processes for ultra-large scale integrated circuit: A case study. Shu Qin. Thin Solid Films Volume 766, 1 February 2023, 139654
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Double-Barrier Quantum-Well Structure: An Innovative Universal Approach for Passivation Contact for Heterojunction Solar Cells. Muhammad Quddamah Khokhar, Hasnain Yousuf, Shahzada Qamar Hussain, Youngkuk Kim,Rajiv Kumar Pandey, Eun-Chel Cho, and Junsin Yi. Applied Energy Materials (2023)
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Applications and mechanisms of anisotropic two-step Si3N4 etching with hydrogen plasma conditioning. Ying Rui, Meng-Hsien Chen, Sumeet Pandey, et al. J. Vac. Sci. Technol. A 41, 022601 (2023)
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Advanced Optical Spectroscopy Techniques for Semiconductors. Masanobu Yoshikawa. Springer, Cham. (2023)
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Design of mechanically advantaged glasses with hydration-induced stress profiles. Timothy M. Gross, Jingshi Wu. International Journal of Applied Glass Science (2023) 
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Impact of B2H6 plasma treatment on contact resistivity in silicon heterojunction solar cells. Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Aki Tanaka, Yoshiko Iseki, Kyotaro Nakamura, Kazuo Muramatsu, Yasuyoshi Kurokawa, Yoshio Ohshita and Noritaka Usami. Kazuhiro Gotoh et al. Jpn. J. Appl. Phys. 62 SK1026 (2023)
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Simultaneous measurement of impurities and composition by secondary ion mass spectrometry with optical emission spectrometry. Takashi Miyamoto, Shigenori Numao, Junichiro Sameshima & Masanobu Yoshikawa. Surface and Interface Analysis. (2023); 1–6.
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Formation of Al3Sc in Al0.8Sc0.2 thin films. Giovanni Esteves, Joseph Bischoff, Ethan W.S. Schmidt, Mark A. Rodriguez, Samantha G. Rosenberg, Paul G. Kotula. Vacuum. Volume 200, June 2022, 111024 
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Boron Delta-Doping in Hydrogenated Amorphous Silicon for High-Performance Silicon Heterojunction Solar Cells. Gotoh, Kazuhiro and Ozaki, Ryo and Morimura, Motoo and Tanaka, Aki and Iseki, Yoshiko and Nakamura, Kyotaro and Muramatsu, Kazuo and Kurokawa, Yasuyoshi and Ohshita, Yoshio and Usami, Noritaka. SSRN. SOLMAT-D-22-00208 (2022) 
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A CVD diamond reactor for controlled thin film growth with sharp layer interfaces. Philip Schätzle, Philipp Reinke, David Herrling, Arne Götze, Lukas Lindner, Jan Jeske, Lutz Kirste, and Peter Knittel. Phys. Status Solidi A 2022, 2200351.
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Imaging and hydrogen analysis by SIMS in zirconium alloy cladding: a dual ion beam approach. N.Mine, S.Portier and M.Martin. Surface and Interface Analysis. Volume 46, Issue S1, pages 249–252, November 2014

Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Noible, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), 1071-1023, Jan/Feb 2010

Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs. C.N. Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, J.L. Hoyt, IEEE Transactions on Electron Devices, Vol. 55, Issue 10, pp 2687-2694, October 2008

SIMS analysis of implanted and RTP annealed wafers for sub-100nm technology. H-U.Ehrke, A.Sears, W.Lerch, S.Paul, G.Roters, D.F.Downey, E.A.Arevalo. Paper at USJ 2003 published in JVST-B 22(1) Jan-Feb 2004

Quantification of Ge and B in SiGe using secondary ion mass spectrometry. H-U.Ehrke, H.Maul, Materials Science in Semiconductor Processing, Vol. 8, Issues 1-3, 2005, 111-114

Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resitive Si1-xGex alloy layers. M. G. Dowsett and al. Applied surface science, 9299 (2002) 1-4

Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. M. G. Dowsett et al, Phys. Rev. B 65, 113412 (2002)