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IMS Wf & SC Ultra

SIMS for Advanced Semiconductor Applications

The IMS Wf and SC Ultra have been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors. Offering a large range of impact energies (100 eV to 10 keV) with no compromise on mass resolution and primary beam density, they ensure unequalled analytical performance at high throughput for the most challenging applications: extra shallow & high energy implants, ultra-thin nitride oxides, high-k metal gates, SiGe doped layers, Si:C:P structures, PV & LED devices, graphene, etc...
  • Product Overview +

    From standard to ultra-shallow depth profiling
    A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a unique SIMS instrument design capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...).

    The CAMECA IMS Wf and SC Ultra are the only SIMS instrument offering such EXtreme Low Impact Energy (EXLIE) capabilities with no compromise on high mass resolution and high transmission.

    High automation level
    As SIMS technique matures, users want to reduce the expertise required to achieve high reproducibility and high precision measurements. The trend is clearly toward unattended, automated analysis. The CAMECA IMS Wf and SC Ultra face this challenge with computer automation ensuring full control of all analytical paramaters (analysis recipe, instrument set-up, etc...).

    The airlock system, sample stage and analysis chamber have been optimized  to accommodate wafers up to 300 mm (IMS Wf model), and to load a high number of samples in one batch -  up to 100 in the IMS Wf model which also offers fully motorized transfer between the airlock and the analysis chamber.

    Thanks to their high level of automation, the IMS Wf and SC Ultra perform fast deep depth profiling with optimized sample throughput and excellent measurement stability, ensuring unprecedented SIMS tool productivity.
  • View Webinars +

    • Dynamic SIMS for Semiconductors

      Thursday, September 16, 2021

      A review of a broad array of IC applications with Dynamic SIMS, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures. Speaker: Pawel Michałowski, expert-user of CAMECA SC Ultra SIMS at Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Poland
      Duration : 20 minutes
      Click here to view
  • See what the IMS Wf and SC Ultra can do +

  • Documentation +

  • Scientific publications +

    Below is a selection of research articles by users of CAMECA IMS Wf and SC Ultra

    You are welcome to send us any missing references, pdf and supplements!
    Please email

    Defect-mediated sputtering process of boron nitride during high incident angle low-energy ion bombardment. Paweł Piotr Michałowski, Dawid Maciążek, Zbigniew Postawa, Piotr A Caban, Sylwia Kozdra, Adrianna Wójcik, Jacek M Baranowski. Measurement 179, 109487 (2021)
    Read the full article

    Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H-SiC. Tymoteusz Ciuk, Wawrzyniec Kaszub, Kinga Kosciewicz, Artur Dobrowolski, Jakub Jagiello, Adrianna Chamryga, Jaroslaw Gaca, Marek Wojcik, Dariusz Czolak, Beata Stanczyk, Krystyna Przyborowska, Roman Kozlowski, Michal Kozubal, Pawel Piotr Michalowski, Maciej Jan Szary, Pawel Kaminski. Current Applied Physics 27, 17-24 (2021)
    Read the full article

    Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on 4H-SiC. Paweł Kamiński, Rafał Budzich, Jarosław Gaca, Paweł Piotr Michałowski, Roman Kozłowski, Anna Harmasz, Tymoteusz Ciuk, Janusz Płocharski. Journal of Materials Chemistry C 9, 4393-4404 (2021)
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    Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls. Paulina Ciechanowicz, Sandeep Gorantla, Paweł Piotr Michałowski, Ewelina Zdanowicz, Jean‐Guy Rousset, Daria Hlushchenko, Krzysztof Adamczyk, Dominika Majchrzak, Robert Kudrawiec, Detlef Hommel. Advanced Optical Materials 9, 2001348 (2021)
    Read the full article

    Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs. 
    Andrzej Taube, Maciej Kamiński, Marek Ekielski, Renata Kruszka, Joanna Jankowska-Śliwińska, Paweł Piotr Michałowski, Joanna Zdunek, Anna Szerling. Materials Science in Semiconductor Processing 122, 105450 (2021).
    Read the full article

    Electrically active and hydrogen passivated Zn in GaAs/AlGaAs specifically distinguished during secondary ion mass spectrometry depth profiling. Adrianna Wójcik, Walery Kolkowski, Iwona Pasternak, Włodzimierz Strupiński, Sylwia Kozdra, Paweł Piotr Michałowski. Journal of Analytical Atomic Spectrometry 36, 178–184 (2021).
    Read the full article

    Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence. Vladimir N. Popok, Piotr A. Caban, Pawel Piotr Michalowski, Ryan Thorpe, Leonard C. Feldman, and Kjeld Pedersen. Journal of Applied Physics 127, 115703 (2020)
    Read the full article

    Carbon incorporation in boron nitride grown by MOCVD under N2 flow. P.A. Caban, P.P. Michalowski, I. Wlasny, J. Gaca, M. Wojcik, P. Ciepielewski, D. Teklinska, J.M. Baranowski. Journal of Alloys and Compounds, Volume 815, 152364 (2020)
    Read the full article

    Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates. Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica E Mura, Kevin Thomas, Anya Curran, Farzan Gity, Roger Nagle, Michael Schmidt, Paweł Piotr Michałowski, Paul K Hurley, Ian Povey, Emanuele Pelucchi. Journal of Physics: Photonics 2, 025003 (2020).
    Read the full article

    3D Depth Profile Reconstruction of Segregated Impurities using Secondary Ion Mass Spectrometry. Paweł Piotr Michałowski, Sebastian Zlotnik, Iwona Jóźwik, Adrianna Chamryga, Mariusz Rudziński. Journal of Visualized Experiments 158, e61065 (2020).
    Read the full article

    Titanium pre-sputtering for an enhanced secondary ion mass spectrometry analysis of atmospheric gas elements. Paweł Piotr Michałowski. Journal of Analytical Atomic Spectrometry 35, 1047 (2020).
    Read the full article

    Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling. Karolina Piętak, Sebastian Złotnik, Ewelina Rozbiegała, Paweł Piotr Michałowski, Marek Wójcik, Jarosław Gaca, Mariusz Rudziński. Journal of Materials Science: Materials in Electronics 31, 17892–17902 (2020). 
    Read the full article

    Locally-Strain-Induced Heavy-Hole-Band Splitting Observed in Mobility Spectrum of p-Type InAs Grown on GaAs. Jarosław Wróbel, Gilberto A. Umana-Membreno, Jacek Boguski, Dariusz Sztenkiel, Paweł Piotr Michałowski, Piotr Martyniuk, Lorenzo Faraone, Jerzy Wróbel, Antoni Rogalski. Physica Status Solidi - Rapid Research Letters 14, 1900604 (2020).
    Read the full article

    Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence. Vladimir N. Popok, Piotr Caban, Paweł Piotr Michałowski, Ryan Thorpe, Leonard C. Feldman, Kjeld Pedersen. Journal of Applied Physics 127, 115703 (2020).
    Read the full article

    Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells. Alexandros Cruz, Florian Ruske, Alberto Eljarrat, Paweł Piotr Michałowski, Anna B. Morales-Vilches, Sebastian Neubert, Er-Chien Wang, Christoph T. Koch, Bernd Szyszka, Rutger Schlatmann, Bernd Stannowski. IEEE Journal of Photovoltaics 10, 8944078, 703-709 (2020).
    Read the full article

    Carbon incorporation in boron nitride grown by MOCVD under N2 flow. Piotr Caban, Paweł Piotr Michałowski, Igor Własny, Jarosław Gaca, Marek Wójcik, Paweł Ciepielewski, Dominika Teklińska, Jacek Baranowski. Journal of Alloys and Compounds 815, 152364 (2020).
    Read the full article

    Magnetic Domains without Domain Walls: A Unique Effect of He+ Ion Bombardment in Ferrimagnetic Tb/Co Films. Łukasz Frąckowiak, Piotr Kuświk, Gabriel David Chaves-O’Flynn, Maciej Urbaniak, Michał Matczak, Paweł Piotr Michałowski, Andrzej Maziewski, Meike Reginka, Arno Ehresmann, Feliks Stobiecki. Physical Review Letters 124, 047203 (2020).
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    Probing a chemical state during ultra low impact energy secondary ion mass spectrometry depth profiling. Paweł Piotr Michałowski. Journal of Analytical Atomic Spectrometry 34, 1954-1956 (2019).
    Read the full article

    Growth and thermal annealing for acceptor activation of p-type (Al)GaN epitaxial structures: Technological challenges and risks. Sebastian Złotnik, Jakub Sitek, Krzysztof Rosiński, Paweł Piotr Michałowski, Jarosław Gaca, Marek Wójcik, Mariusz Rudziński. Applied Surface Science 488, 688-695 (2019).
    Read the full article

    Indium concentration fluctuations in InGaN/GaN quantum wells. Paweł Piotr Michałowski, Ewa Grzanka, Szymon Grzanka, Artur Lachowski, Grzegorz Staszczak, Mike Leszczyński, Andrzej Turos.
    Journal of Analytical Atomic Spectrometry 34, 1718-1723 (2019).!divAbstract

    Three dimensional localization of unintentional oxygen impurities in gallium nitride. Paweł Piotr Michałowski, Sebastian Złotnik, Mariusz Rudziński. Chemical Communications 55, 11539-11542 (2019)!divAbstract

    Thermal Conversion of Ethanol into Carbon Nanotube Coatings with Adjusted Packing Density. H. Jagalur Basheer, K. Baba, and N. Bahlawane. ACS Omega (2019), 4, 6, 10405–10410.
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    Growth of highly oriented MoS2 via an intercalation process in the graphene/SiC(0001) system. Paweł Piotr Michałowski, Piotr Knyps, Paweł Ciepielewski, Piotr Caban, Ewa Dumiszewska, Grzegorz Kowalski, Mateusz Tokarczyk, Jacek Baranowski. Physical Chemistry Chemical Physics 21, 20641-20646 (2019).!divAbstract

    Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution.
    Paweł Piotr Michałowski,  Piotr Caban  and  Jacek Baranowski. Journal of Analytical Atomic Spectrometry 34, 848-853 (2019).

    Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometry. Paweł Piotr Michałowski, Piotr Knyps, Paweł Ciepielewski, Piotr Caban, Ewa Dumiszewska  and  Jacek Baranowski. Physical Chemistry Chemical Physics 21, 8837-8842 (2019).

    Crystallisation Phenomena of In2O3:H Films. Ruslan Muydinov, Alexander Steigert, Markus Wollgarten, Paweł Piotr Michałowski, Ulrike Bloeck, Andreas Pflug, Darja Erfurt, Reiner Klenk, Stefan Körner, Iver Lauermann and Bernd Szyszka. Materials 12, 266 (2019)

    A passivating contact for silicon solar cells formed during a single firing thermal annealing. Andrea Ingenito, Gizem Nogay, Quentin Jeangros, Esteban Rucavado, Christophe Allebé, Santhana Eswara, Nathalie Valle, Tom Wirtz, Jörg Horzel, Takashi Koida, Monica Morales-Masis, Matthieu Despeisse, Franz-Josef Haug, Philipp Löper & Christophe Ballif. Nature Energy, volume 3, pages800–808 (2018)

    A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices. Paweł Piotr Michałowski , Wawrzyniec Kaszub, Piotr Knyps, Krzysztof Rosiński, Beata Stańczyk, Krystyna Przyborowska and Ewa Dumiszewska. ACS Applied Matererials & Interfaces  10, 37694-37698 (2018)

    Oxygen out-diffusion and compositional changes in zinc oxide during ytterbium ions bombardment.
    Paweł Piotr Michałowski Jarosław Gaca Marek Wójcik Andrzej Turos. Nanotechnology 29, 425710 (2018)

    Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements. Tymoteusz Ciuk, Andrzej Kozlowski, Paweł Piotr Michałowski, Wawrzyniec Kaszub, Michal Kozubal, Zbigniew Rekuc, Jaroslaw Podgorski, Beata Stanczyk, Krystyna Przyborowska, Iwona Jozwik, Andrzej Kowalik, Pawel Kaminski. Carbon 139, 776-781 (2018)

    The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride. Piotr A. Caban, Dominika Teklinska, Paweł P. Michałowski, Jaroslaw Gaca, Marek Wojcik, Justyna Grzonka, Pawel Ciepielewski, Malgorzata Mozdzonek, Jacek M. Baranowski. Journal of Crystal Growth 498, 71-76 (2018)

    Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures. Paweł Piotr Michałowski, Sebastian Złotnik, Jakub Sitek, Krzysztof Rosińskia and Mariusz Rudzińskia. Physical Chemistry Chemical Physics 20, 13890-13895 (2018)

    Self-organized multi-layered graphene–boron-doped diamond hybrid nanowalls for high-performance electron emission devices. Kamatchi Jothiramalingam Sankaran, Mateusz Ficek, Srinivasu Kunuku, Kalpataru Panda, Chien-Jui Yeh, Jeong Young Park, Miroslaw Sawczak, Paweł Piotr Michałowski, Keh-Chyang Leou, Robert Bogdanowicz, I-Nan Lin and Ken Haenen. Nanoscale 10, 1345-1355 (2018)

    Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of Graphene
    . Paweł Piotr Michałowski, Iwona Pasternak, Paweł Ciepielewski, Francisco Guinea and Włodek Strupiński. Nanotechnology 29, 305302 (2018)

    Contamination-free Ge-based graphene as revealed by graphene enhanced secondary ion mass spectrometry (GESIMS). Paweł Piotr Michałowski, Iwona Pasternak and Włodek Strupiński. Nanotechnology 29, 015702 (2018).

    Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers. D. Colombara, F. Werner, T. Schwarz, I. Cañero Infante, Y. Fleming, N. Valle, C. Spindler, E. Vacchieri, G. Rey, M. Guennou, M. Bouttemy, A. Garzón Manjón, I. Peral Alonso, M. Melchiorre, B. El Adib, B. Gault, D. Raabe, Phillip J. Dale & S. Siebentritt. Nature Communications volume 9, Article number: 826 (2018). Read full article

    Influence of hydrogen intercalation on graphene/Ge(0 0 1)/Si(0 0 1) interface.
    Justyna Grzonka, Iw ona Pasternak, Paweł Piotr Michałowski, Valery Kolkovsky and Włodek Strupiński. Applied Surface Science 447, 582-586 (2018).

    Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry. Paweł Piotr Michałowski, Piotr Gutowski, Dorota Pierścińska, Kamil Pierściński, Maciej Bugajski and  Włodek Strupińskiac. Nanoscale 9, 17571-17575 (2017).

    Facet‐Independent Electric‐Field‐Induced Volume Metallization of Tungsten Trioxide Films. S. G. Altendorf, J. Jeong, D. Passarello, N. B. Aetukuri, M. G. Samant, Stuart S. P. Parkin. Advanced Materials, Volume28, Issue26, July 13, (2016), Pages 5284-5292. Read full article

    Graphene Enhanced Secondary Ion Mass Spectrometry (GESIMS).
    Paweł Piotr Michałowski, Wawrzyniec Kaszub, Iwona Pasternak and Włodek Strupiński. Scientific Reports 7, 7479 (2017).

    Reproducibility of implanted dosage measurement with CAMECA Wf. Kian Kok Ong, Yun Wang and Zhiqiang Mo. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
    DOI: 10.1109/IPFA.2017.8060158

    Investigation of Cs+ bombardment effects in ultra-thin oxynitride gate dielectrics characterization by DSIMS. Yun Wang, Kian Kok Ong, Zhi Qiang Mo, Han Wei Teo, Si Ping Zhao. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
    DOI: 10.1109/IPFA.2017.8060216

    Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC.
    Pawel Piotr Michalowski, Wawrzyniec Kaszub, Alexandre Merkulov and Wlodek Strupinski. Appl. Phys. Lett. 109, 011904 (2016).

    SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David and Jean-Paul Barnes. J. Vac. Sci. Technol. B 34, 03H131 (2016). 

    Kr implantation into heavy ion irradiated monolithic UeMo/Al systems: SIMS and SEM investigations. T. Zweifel, N. Valle, C. Grygiel, I. Monnet, L. Beck, W. Petry (2016), Journal of Nuclear Materials, Volume 470, Pages 251-257. doi:10.1016/j.jnucmat. 2015.12.039.

    Investigation of the depth‐profiling capabilities of the Storing Matter technique. B. Kasel T. Wirtz. Journal of mass spectrometry (2015). Read full article

    Organo-Chlorinated Thin Films Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition for Adhesion Enhancement between Rubber and Zinc-Plated Steel Monofilaments. C. Vandenabeele, S. Bulou, R. Maurau, F. Siffer, T. Belmonte and P. Choquet. ACS Appl. Mater. Interfaces (2015), 7, 26, 14317–14327. Read full article

    Ion beam characterizations of plasma immersion ion implants for advanced nanoelectronic applications.
    M. Veillerot, F. Mazen, N. Payen, J.P. Barnes, F. Pierre (2014), SIMS Europe 2014, September 7-9, 2014.

    Temperature-Dependent Wear Mechanisms for Magnetron-Sputtered AlTiTaN Hard Coatings. V. Khetan, N. Valle, D. Duday, C. Michotte, C. Mitterer, M-P Delplancke-Ogletree, and P. Choquet. ACS Appl. Mater. Interfaces (2014), 6, 17, 15403–15411. Read full article

    Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer (2014), 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011.

    Cesium/Xenon dual beam sputtering in a Cameca instrument.
    R. Pureti, B.Douhard, D.Joris, A.Merkulov and W.Vandervorst. Surface and Interface Analysis. Volume 46, Issue S1, pages 25–30, November 2014

    Si- useful yields measured in Si, SiC, Si3N4 and SiO2: comparison between the Strong Matter technique and SIMS. B.Kasel and T.Wirtz. Surface and Interface Analysis. Volume 46, Issue S1, pages 39–42, November 2014 

    Reduction of the SIMS Matrix Effect Using the Storing Matter Technique: A Case Study on Ti in Different Matrices. B. Kasel and T. Wirtz. Anal. Chem. (2014), 86, 8, 3750–3755. Read full article

    Influence of Temperature on Oxidation Mechanisms of Fiber-Textured AlTiTaN Coatings. V. Khetan, N. Valle, D. Duday, C. Michotte, M-P Delplancke-Ogletree, and P. Choquet. ACS Appl. Mater. Interfaces (2014), 6, 6, 4115–4125. Read full article

    Homogeneous Surface Oxidation of Organosilicates by Controlled Combustion of Adsorbed Fuels: A Facile Method for Low-Temperature Processing. Bob E. Feller, Vaughn R. Deline, John Bass, André Knoesen, and Robert D. Miller. ACS Appl. Mater. Interfaces (2013), 5, 18, 9075–9087. Read full article

    Crystal-Facet-Dependent Metallization in Electrolyte-Gated Rutile TiO2 Single Crystals. T. D. Schladt, T. Graf, N. B. Aetukuri, M. Li, A Fantini, X Jiang, M. G. Samant, and S S. P. Parkin. ACS Nano (2013), 7, 9, 8074–8081. Read full article

    Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding.
    K. Wittmaack. Surface Science Reports. Volumn 68, Issue 1, pages 108–230, 1 March 2013

    Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs+ Probe in Dynamic Secondary Ion Mass Spectrometry. P. Philipp, Quyen K. Ngo, M. Shtein, J. Kieffer, and T. Wirtz. Anal. Chem. 2013, 85, 1, 381–388. Read full article

    The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen.
    A. Merkulov. Surface and Interface Analysis. Volume 45, Issue 1, pages 90–92, January 2013

    Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surface and Interface Analysis. Volume 45, Issue 1, pages 345–347, January 2013 

    Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5138.

    The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen. A. Merkulov. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5132 

    Characteristics of cross-sectional atom probe analysis on semiconductor structures. S.Koelling, N. Innocenti, G.Hellings, M.Gilbert, A.K.Kambham, K. De Meyer, W. Vandervorst. Ultramicroscopy, Volume 111, Issue 6, (May 2011), Pages 540-545. Read full article

    Experimental studies of dose retention and activation in fin field-effect-transistor-based structures. Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, and Wilfried Vandervorst (2010), Journal of Vacuum Science & Technology B, Volume 28, Issue 1. C1H5. doi: 10.1116/1.3269755.

    Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs.
    M.J.P. Hopstaken, M.S. Gordon, D. Pfeiffer, D.K. Sadana, T. Topuria, P.M. Rice, C. Gerl, M. Richter, C. Marchiori. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 28, Issue 6, 1287, 18 November 2010

    Depth profile characterization of ultra shallow junction implants. P. Hönicke, B. Beckhoff, M. Kolbe, D. Giubertoni, J. van den Berg & G. Pepponi. Analytical and Bioanalytical Chemistry volume 396, pages2825–2832(2010). Read full article

    Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants.
    A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588

    Chemical Erosion and Transport: Transport and Deposition of First Wall Impurities. Francesco Ghezzi (2009), CONSIGLIO NAZIONALE DELLE RICERCHE. TASK PWI-08-TA-06. 

    Long-term Reproducibility of Relative Sensitivity Factors Obtained with CAMECA Wf. D. Gui, ZX Xing, YH Huang, ZQ Mo, YN Hua, SP Zhao, LZ Cha. Applied Surface Science, Volume 255, Issue 4, Pages 1427–1429 (2008)

    EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology. W.Vandervorst, R.Vos, A.J.Salima, A.Merkulov, K. Nakajimac and K.Kimura. Proceedings of the 17th International Conference on Ion Implentation Technology, IIT 2008, Monterey, CA, USA. AIP Conf. Proc. Vol. 1066 (2008), 109-112

    Semiconductor profiling with sub-nm resolution: challenges and solutions. W.Vandervorst, App. Surf. Science 255 (2008) 805

    Roughness development in the depth profiling with 500eV O2 beam with the combination of oxygen flooding and sample rotation. D. Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1433

    Depth profiling of ultra-thin oxynitride date dielectrics by using MCs2+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha (2008), App. Surf. Science, Volume 255, Issue 4, Pages 1437-1439. doi:10.1016/j.apsusc.2008.06.047.

    Impurity measurement in silicon with D-SIMS and atom probe tomography. P.Ronsheim, App. Surf. Science 255 (2008) 1547. 

    SIMS depth profiling of boron ultra shallow junctions using oblique O2 beam down to 150eV. M.Juhel, F.Laugier, D.Delille,C.Wyon, L.F.T.Kwakman and M.Hopstaken, App. Surf. Science 252 (2006), 7211

    Boron ultra low energy SIMS depth profiling improved by rotating stage. M.Bersani, D.Guibertoni, at al, App. Surf. Science 252 (2006) 7315

    Comparison between SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. M.Bersani, D.Guibertoni, et al, App. Surf. Science 252 (2006) 7214

    SIMS Depth Profiling of SiGe:C structures in test pattern areas using low energy Cs with a Cameca Wf , M.Juhel, F. Laugier, App. Surf. Science 231-232 (2004) 698

    Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers. P.A.Ronsheim, R.Loesing and A.Mada, App. Surf. Science 231-232 (2004) 762

    Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

    Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

    Accurate on-line depth calibration with laser interferometer during SIMS profiling experiment on the CAMECA IMS Wf instrument. O. Merkulova, A. Merkulov, M. Schuhmacher, and E. de Chambost. SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 954–958

    Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953

  • Some of our users +

    Below a small selection of IMS Wf and SC Ultra users. Many actors in the semiconductor industry wish to remain confidential and cannot appear here.

    ITC-irst (Fondazione Bruno Kessler), divisione FSC, Italy
    The FSC division led by Mariano Anderle develops and applies new surface analytical methodologies on last generation microelectronic devices and materials. It is involved in long term collaborations with several leading microelectronics companies. Masterpiece of the Materials and Analysis for Micro-Electronics lab under the direction of Massimo Bersani is a CAMECA IMS SC Ultra.

    CNT, Fraunhofer-Center Nanoelektronische Technologien, Dresden, Germany
    This public-private partnership between the Fraunhofer Gesellschaft and leading semiconductor manufacturers aims at developing new process technologies for nanoelectronics. It is equiped with state-of the-art instruments for materials charactrization, among which a CAMECA IMS Wf.

    Science and Analysis of Materials (SAM), Luxemburg
    A departement of Gabriel Lippmann public research center, SAM started its activities in 1992. Both a fundamental and applied research facility as well as an analytical service laboratory, it provides assistance to more than 100 industrial and academic partners worldwide. It is equipped with a CAMECA SC Ultra and a NanoSIMS 50.

  • Software +

    • WinCurve dataprocessing sofware

      Specifically developed for CAMECA SIMS instruments, WinCurve offers powerful data processing & visualization capabilities in a user-friendly environment.

      Keep Reading

    • WinImage Software
      WinImage II

      Specifically developed for CAMECA SIMS instruments, WinImage II offers powerful image visualization, processing & printing capabilities under PC-Windows™ Environment.

      Keep Reading

    • APM Software

      Automated Particle Measurement (APM) is CAMECA software tool allowing fast screening of millions of particles, particle detection and isotopic characterization.

      Keep Reading

  • Upgrade kits +

    Automation & Software - Sources - Airlock - Specimen Chamber

    Automation & Software

    PC-Automation (Wf/SCU)
    PC-Automation system to replace SUN system, allows full automation & unattended operation and greatly improves ease of use.
    Please note that most of the upgrade kits listed below can only be installed on IMS Wf  and SC Ultra instruments equipped with PC-Automation.

    Post-treatment (Wf/SCU)
    PC station for off-line data treatement (CAMECA software not included).

    Desk control duplication (Wf/SCU)
    Additional PC, keyboard, CAMECA keypad, screens... ensuring optimized operation comfort when the lab is split in two parts.

    WinCurve software (Wf/SCU)
    Offers powerful SIMS data processing & graphing capabilities together with easy report creation functionalities.

    WinImage Software (Wf/SCU)
    Offers powerful SIMS image processing functions, available in Standard or Extended version.

    Remote monitoring
    Real Time Display software licence providing remote access to all instrumental parameters, thus allowing the operator to remotely tune and run the instrument from his/her own PC.

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    Low energy cesium ion source (Wf/SCU)
    With this new high brightness cesium ion source, the IMS Wf/SCU can now perform Extremely Low Impact Depth Profiling and analyse ultra thin layers with nanometer depth resolution.

    High brightness RF plasma oxygen ion source (Wf/SCU)
    Compared to conventional DUO-plasmatron, the RF plasma source allows substantial performance improvements using ultra low energy O2 primary beam.

    Specimen Chamber

    Motorized Z-movement stage (Wf/SCU)
    Replaces the piezo-stage movement

    Turbo Detection (Wf/SCU)
    Turbomolecular pump to replace the existing ionic pump. Improves vacuum in the detection system.

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