SIMS

IMS Wf & SC Ultra

2d and 3D imaging in seminconductor with IMS Wf and Winimage

SIMS for Advanced Semiconductor Applications

The IMS Wf and SC Ultra have been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors. Offering a large range of impact energies (100 eV to 10 keV) with no compromise on mass resolution and primary beam density, they ensure unequalled analytical performance at high throughput for the most challenging applications: extra shallow & high energy implants, ultra-thin nitride oxides, high-k metal gates, SiGe doped layers, Si:C:P structures, PV & LED devices, graphene, etc...

Product Overview +

From standard to ultra-shallow depth profiling
A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a unique SIMS instrument design capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...).

The CAMECA IMS Wf and SC Ultra are the only SIMS instrument offering such EXtreme Low Impact Energy (EXLIE) capabilities with no compromise on high mass resolution and high transmission.

High automation level
As SIMS technique matures, users want to reduce the expertise required to achieve high reproducibility and high precision measurements. The trend is clearly toward unattended, automated analysis. The CAMECA IMS Wf and SC Ultra face this challenge with computer automation ensuring full control of all analytical paramaters (analysis recipe, instrument set-up, etc...).

The airlock system, sample stage and analysis chamber have been optimized to accommodate wafers up to 300 mm (IMS Wf model), and to load a high number of samples in one batch - up to 100 in the IMS Wf model which also offers fully motorized transfer between the airlock and the analysis chamber.

Thanks to their high level of automation, the IMS Wf and SC Ultra perform fast deep depth profiling with optimized sample throughput and excellent measurement stability, ensuring unprecedented SIMS tool productivity.

View Webinars +
- Secondary Ion Mass Spectrometry Measurements with a Large Scale-to-Resolution Ratio
  
  Thursday, November 28, 2024
  
  This webinar presented by Paweł Michałowski from Łukasiewicz - IMiF, is only available on demand. Please fill in the contact form under CONTACT -> CONTACT US to request the link.
  Click here to view
- Dynamic SIMS for Semiconductors
  
  Thursday, September 16, 2021
  
  A review of a broad array of IC applications with Dynamic SIMS, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures. Speaker: Pawel Michałowski, expert-user of CAMECA SC Ultra SIMS at Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Poland
  ↓ Duration : 20 minutes
  
  Click here to view
- Secondary Ion Mass Spectrometry Characterization of MAX and MXene Samples
  
  Tuesday, December 13, 2022
  
  Learn with Dr. Paweł P. Michałowski why novel ultrathin 2D materials are so attractive for applications ranging from energy storage to electronics and medicine, how compositional variability and the interaction of surface termination layers affect fine-tuning of MAX and MAXenes properties and how ultra-low energy Secondary Ion Mass Spectrometry can facilitate further development of MAX and MXenes.
  ↓ Duration: 48 minutes
  
  Click here to view

See what the IMS Wf and SC Ultra can do +
- Ultra shallow implant metrology (EXLIE SIMS)
  
  EXtreme Low Impact Energy SIMS tools are used to monitor in-depth distributions of dopants.
  
  Keep Reading

Documentation +
- Brochure - IMS Wf and SC Ultra
- Application - Thin Film Metrology and Ultra Shallow Implant Process Control
- Application - Boron Implant Characterization: Advantage of EXLIE SIMS over PCOR

Scientific publications +

Below is a small selection of research articles by users of CAMECA IMS Wf and SC Ultra.

A PDF spreadsheet compiling scientific research articles using IMS Wf & SC Ultra data is available for download.
Click here to download
You are welcome to send us any missing references, pdf and supplements!
Please email cameca.info@ametek.com

Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing. S. Kerdil`es, M. Opprecht, D. Bosch, M. Ribotta, B. Skl´enard, L. Brunet, P.P. Michalowski. Materials Science in Semiconductor Processing Volume 186, February (2025), 109043.
Read the full article

Ultralow impact energy dynamic secondary ion mass spectrometry with nonfully oxidizing surface conditions. A. Merkulov. J. Vac. Sci. Technol. B 42, 064005 (2025)

Fabrication and Characterization of Boron‑Implanted Silicon Superconducting Thin Films on SOI Substrates for Low‑Temperature Detectors. A. Aliane · L. Dussopt · S. Kerdilès · H. Kaya · P. Acosta‑Alba · N. Bernier ·A.‑M. Papon · E. Martinez · M. Veillerot · F. Lefloch. Journal of Low Temperature Physics (2024)
Read the full article

MXenes with ordered triatomic-layer borate polyanion terminations. Dongqi Li, Wenhao Zheng, Sai Manoj Gali, Kamil Sobczak, Michal Horák, Josef Polčá, Nikolaj Lopatik, Zichao Li, Jiaxu Zhang, Davood Sabaghi, Shengqiang Zhou, Paweł P. Michałowski, Ehrenfried Zschech, Eike Brunner, Mikołaj Donten, Tomáš Šikola, Mischa Bonn, Hai I. Wang, David Beljonne, Minghao Yu, Xinliang Feng. ChemRxiv (2024)
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Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN. Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska-Skrobas, Jarosław Żelazko, and Ewa Grzanka. Sci Rep. (2024); 14: 14272
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Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device. Marivone Gusatti, Daniel Aragão Ribeiro de Souza, Mario Barozzi, Rossana Dell’Anna, Elena Missale, Lia Vanzetti, Massimo Bersani, and Marcelo Nalin. ACS Appl. Mater. Interfaces (2024)
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Advanced SiGe: B Raised Sources and Drains for p-type FD-SOI MOSFETs. Jean-Michel Hartmann, Francois Aussenac, Olivier Glorieux, David Cooper, Sebastien Kerdilès, Zdenek Chalupa, Francois Boulard, Heimanu Niebojewski, Blandine Duriez, Thomas Bordignon, Sebastien Peru, Pawel Michałowski, Richard Daubriac, Fuccio Cristiano. ECS Transactions 114(2),185 (2024)
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Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires. Paweł Piotr Michałowski, Jonas Müller, Chiara Rossi, Alexander Burenkov, Eberhard Bär, Guilhem Larrieu, Peter Pichler. Measurement 211, 112630 (2023)
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Oxycarbide MXenes and MAX phases identification using monoatomic layer-by-layer analysis with ultralow-energy secondary-ion mass spectrometry. Paweł Piotr Michałowski, Mark Anayee, Tyler S Mathis, Sylwia Kozdra, Adrianna Wójcik, Kanit Hantanasirisakul, Iwona Jóźwik, Anna Piątkowska, Małgorzata Możdżonek, Agnieszka Malinowska, Ryszard Diduszko, Edyta Wierzbicka, Yury Gogotsi. Nature Nanotechnology 17, 1192-1197 (2022)
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Titanium pre-sputtering for an enhanced secondary ion mass spectrometry analysis of atmospheric gas elements. Paweł Piotr Michałowski. Journal of Analytical Atomic Spectrometry 35, 1047 (2020).
Read the full article

Growth and thermal annealing for acceptor activation of p-type (Al)GaN epitaxial structures: Technological challenges and risks. Sebastian Złotnik, Jakub Sitek, Krzysztof Rosiński, Paweł Piotr Michałowski, Jarosław Gaca, Marek Wójcik, Mariusz Rudziński. Applied Surface Science 488, 688-695 (2019).
Read the full article

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers. D. Colombara, F. Werner, T. Schwarz, I. Cañero Infante, Y. Fleming, N. Valle, C. Spindler, E. Vacchieri, G. Rey, M. Guennou, M. Bouttemy, A. Garzón Manjón, I. Peral Alonso, M. Melchiorre, B. El Adib, B. Gault, D. Raabe, Phillip J. Dale & S. Siebentritt. Nature Communications volume 9, Article number: 826 (2018).
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Reproducibility of implanted dosage measurement with CAMECA Wf. Kian Kok Ong, Yun Wang and Zhiqiang Mo. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
Read the full article

Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC. Pawel Piotr Michalowski, Wawrzyniec Kaszub, Alexandre Merkulov and Wlodek Strupinski. Appl. Phys. Lett. 109, 011904 (2016).
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SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David and Jean-Paul Barnes. J. Vac. Sci. Technol. B 34, 03H131 (2016).
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Ion beam characterizations of plasma immersion ion implants for advanced nanoelectronic applications. M. Veillerot, F. Mazen, N. Payen, J.P. Barnes, F. Pierre (2014), SIMS Europe 2014, September 7-9, 2014.

Influence of Temperature on Oxidation Mechanisms of Fiber-Textured AlTiTaN Coatings. V. Khetan, N. Valle, D. Duday, C. Michotte, M-P Delplancke-Ogletree, and P. Choquet. ACS Appl. Mater. Interfaces (2014), 6, 6, 4115–4125.
Read the full article

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs+ Probe in Dynamic Secondary Ion Mass Spectrometry. P. Philipp, Quyen K. Ngo, M. Shtein, J. Kieffer, and T. Wirtz. Anal. Chem. 2013, 85, 1, 381–388.
Read the full article

Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs. M.J.P. Hopstaken, M.S. Gordon, D. Pfeiffer, D.K. Sadana, T. Topuria, P.M. Rice, C. Gerl, M. Richter, C. Marchiori. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 28, Issue 6, 1287, 18 November 2010

Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants. A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588

Depth profiling of ultra-thin oxynitride date dielectrics by using MCs2+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha (2008), App. Surf. Science, Volume 255, Issue 4, Pages 1437-1439. doi:10.1016/j.apsusc.2008.06.047.

Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953
Some of our users +

Below a small selection of IMS Wf and SC Ultra users. Many actors in the semiconductor industry wish to remain confidential and cannot appear here.

Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Poland
The research team under leadership of Pawel Piotr Michalowski at Łukasiewicz - Institute of Microelectronics and Photonics uses an SC Ultra to analyze ultra-thin and 2D materials as well as full device structures. Numerous publications have been released on a wide spectrum of topics ranging from graphene and quantum cascade layers to solid polymer electronics for energy storage. Dr Michałowski also worked on analyzing doping uniformity in semiconductor materials like p-type InAs grown on GaAs. Using the CAMECA SC Ultra, he achieved depth resolution below 1 nm, which is critical for understanding the distribution of dopants in semiconductor layers.

ITC-irst (Fondazione Bruno Kessler), divisione FSC, Italy
The FSC division led by Mariano Anderle develops and applies new surface analytical methodologies on last generation microelectronic devices and materials. It is involved in long term collaborations with several leading microelectronics companies. Masterpiece of the Materials and Analysis for Micro-Electronics lab under the direction of Massimo Bersani is a CAMECA IMS SC Ultra.

CNT, Fraunhofer-Center Nanoelektronische Technologien, Dresden, Germany
This public-private partnership between the Fraunhofer Gesellschaft and leading semiconductor manufacturers aims at developing new process technologies for nanoelectronics. It is equiped with state-of the-art instruments for materials charactrization, among which a CAMECA IMS Wf.

Science and Analysis of Materials (SAM), Luxemburg
A departement of Gabriel Lippmann public research center, SAM started its activities in 1992. Both a fundamental and applied research facility as well as an analytical service laboratory, it provides assistance to more than 100 industrial and academic partners worldwide. It is equipped with a CAMECA SC Ultra and a NanoSIMS 50.

Software +
- SmartPRO
  
  The new SmartPRO software package for CAMECA IMS 7f-Auto, IMS Wf and SC Ultra Secondary Ion Mass Spectrometers combines Chain Analysis and WinCurve in a seamlessly integrated environment and adds real time data processing and automation functionalities thus improving ease of use, productivity and data quality.
  
  Keep Reading
- WinCurve
  
  Specifically developed for CAMECA SIMS instruments, WinCurve offers powerful data processing & visualization capabilities in a user-friendly environment.
  
  Keep Reading
- WinImage II
  
  Specifically developed for CAMECA SIMS instruments, WinImage II offers powerful image visualization, processing & printing capabilities under PC-Windows™ Environment.
  
  Keep Reading
Upgrade kits +

Automation & Software - Sources - Airlock - Specimen Chamber

Automation & Software

PC-Automation (Wf/SCU)
PC-Automation system to replace SUN system, allows full automation & unattended operation and greatly improves ease of use.
Please note that most of the upgrade kits listed below can only be installed on IMS Wf and SC Ultra instruments equipped with PC-Automation.

Post-treatment (Wf/SCU)
PC station for off-line data treatement (CAMECA software not included).

Desk control duplication (Wf/SCU)
Additional PC, keyboard, CAMECA keypad, screens... ensuring optimized operation comfort when the lab is split in two parts.

WinCurve software (Wf/SCU)
Offers powerful SIMS data processing & graphing capabilities together with easy report creation functionalities.

WinImage Software (Wf/SCU)
Offers powerful SIMS image processing functions, available in Standard or Extended version.

Remote monitoring (Wf/SCU)
Real Time Display software licence providing remote access to all instrumental parameters, thus allowing the operator to remotely tune and run the instrument from his/her own PC.

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Sources

Low energy cesium ion source (Wf/SCU)
With this new high brightness cesium ion source, the IMS Wf/SCU can now perform Extremely Low Impact Depth Profiling and analyse ultra thin layers with nanometer depth resolution.

High brightness RF plasma oxygen ion source (Wf/SCU)
Compared to conventional DUO-plasmatron, the RF plasma source allows substantial performance improvements using ultra low energy O2 primary beam.

Specimen Chamber

Motorized Z-movement stage (Wf/SCU)
Replaces the piezo-stage movement

Turbo Detection (Wf/SCU)
Turbomolecular pump to replace the existing ionic pump. Improves vacuum in the detection system.

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