SIMS & NanoSIMS

• Materials
• Geosciences
• Nuclears

• Stable isotopes
• Geochronology
• Trace elements
• Nuclear forensics

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Please email cameca.info@ametek.com.

Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution. Paweł Piotr Michałowski,  Piotr Caban  and  Jacek Baranowski. Journal of Analytical Atomic Spectrometry 34, 848-853 (2019)
https://pubs.rsc.org/en/content/articlelanding/2019/ja/c9ja00004f

Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometry. Paweł Piotr Michałowski, Piotr Knyps, Paweł Ciepielewski, Piotr Caban, Ewa Dumiszewska  and  Jacek Baranowski. Physical Chemistry Chemical Physics 21, 8837-8842 (2019).
https://pubs.rsc.org/en/content/articlelanding/2019/cp/c9cp00613c

Crystallisation Phenomena of In2O3:H Films. Ruslan Muydinov, Alexander Steigert, Markus Wollgarten, Paweł Piotr Michałowski, Ulrike Bloeck, Andreas Pflug, Darja Erfurt, Reiner Klenk, Stefan Körner, Iver Lauermann and Bernd Szyszka. Materials 12, 266 (2019)
https://www.mdpi.com/1996-1944/12/2/266

A passivating contact for silicon solar cells formed during a single firing thermal annealing. Andrea Ingenito, Gizem Nogay, Quentin Jeangros, Esteban Rucavado, Christophe Allebé, Santhana Eswara, Nathalie Valle, Tom Wirtz, Jörg Horzel, Takashi Koida, Monica Morales-Masis, Matthieu Despeisse, Franz-Josef Haug, Philipp Löper & Christophe Ballif. Nature Energy, volume 3, pages800–808 (2018)
https://www.nature.com/articles/s41560-018-0239-4

A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices. Paweł Piotr Michałowski , Wawrzyniec Kaszub, Piotr Knyps, Krzysztof Rosiński, Beata Stańczyk, Krystyna Przyborowska and Ewa Dumiszewska. ACS Applied Matererials & Interfaces  10, 37694-37698 (2018)
https://pubs.acs.org/doi/10.1021/acsami.8b13062

Oxygen out-diffusion and compositional changes in zinc oxide during ytterbium ions bombardment. Paweł Piotr Michałowski Jarosław Gaca Marek Wójcik Andrzej Turos. Nanotechnology 29, 425710 (2018)
http://iopscience.iop.org/article/10.1088/1361-6528/aad881

Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements. Tymoteusz Ciuk, Andrzej Kozlowski, Paweł Piotr Michałowski, Wawrzyniec Kaszub, Michal Kozubal, Zbigniew Rekuc, Jaroslaw Podgorski, Beata Stanczyk, Krystyna Przyborowska, Iwona Jozwik, Andrzej Kowalik, Pawel Kaminski. Carbon 139, 776-781 (2018)
https://www.sciencedirect.com/science/article/pii/S0008622318306973

The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride. Piotr A. Caban, Dominika Teklinska, Paweł P. Michałowski, Jaroslaw Gaca, Marek Wojcik, Justyna Grzonka, Pawel Ciepielewski, Malgorzata Mozdzonek, Jacek M. Baranowski. Journal of Crystal Growth 498, 71-76 (2018)
https://www.sciencedirect.com/science/article/pii/S0022024818302756

Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures. Paweł Piotr Michałowski, Sebastian Złotnik, Jakub Sitek, Krzysztof Rosińskia and Mariusz Rudzińskia. Physical Chemistry Chemical Physics 20, 13890-13895 (2018)
http://pubs.rsc.org/en/Content/ArticleLanding/2018/CP/C8CP01470A

Self-organized multi-layered graphene–boron-doped diamond hybrid nanowalls for high-performance electron emission devices. Kamatchi Jothiramalingam Sankaran, Mateusz Ficek, Srinivasu Kunuku, Kalpataru Panda, Chien-Jui Yeh, Jeong Young Park, Miroslaw Sawczak, Paweł Piotr Michałowski, Keh-Chyang Leou, Robert Bogdanowicz, I-Nan Lin and Ken Haenen. Nanoscale 10, 1345-1355 (2018)
http://pubs.rsc.org/en/content/articlelanding/2018/nr/c7nr06774g

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of Graphene. Paweł Piotr Michałowski, Iwona Pasternak, Paweł Ciepielewski, Francisco Guinea and Włodek Strupiński. Nanotechnology 29, 305302 (2018)
http://iopscience.iop.org/article/10.1088/1361-6528/aac307

Contamination-free Ge-based graphene as revealed by graphene enhanced secondary ion mass spectrometry (GESIMS). Paweł Piotr Michałowski, Iwona Pasternak and Włodek Strupiński. Nanotechnology 29, 015702 (2018).
http://iopscience.iop.org/article/10.1088/1361-6528/aa98ed

Influence of hydrogen intercalation on graphene/Ge(0 0 1)/Si(0 0 1) interface. Justyna Grzonka, Iw ona Pasternak, Paweł Piotr Michałowski, Valery Kolkovsky and Włodek Strupiński. Applied Surface Science 447, 582-586 (2018).
https://www.sciencedirect.com/science/article/pii/S0169433218309838

Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry. Paweł Piotr Michałowski, Piotr Gutowski, Dorota Pierścińska, Kamil Pierściński, Maciej Bugajski and  Włodek Strupińskiac. Nanoscale 9, 17571-17575 (2017).
http://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C7NR06401B

Graphene Enhanced Secondary Ion Mass Spectrometry (GESIMS). Paweł Piotr Michałowski, Wawrzyniec Kaszub, Iwona Pasternak and Włodek Strupiński. Scientific Reports 7, 7479 (2017).
https://www.nature.com/articles/s41598-017-07984-1

Reproducibility of implanted dosage measurement with CAMECA Wf. Kian Kok Ong, Yun Wang and Zhiqiang Mo. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
DOI: 10.1109/IPFA.2017.8060158

Investigation of Cs+ bombardment effects in ultra-thin oxynitride gate dielectrics characterization by DSIMS. Yun Wang, Kian Kok Ong, Zhi Qiang Mo, Han Wei Teo, Si Ping Zhao. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
DOI: 10.1109/IPFA.2017.8060216

Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC. Pawel Piotr Michalowski, Wawrzyniec Kaszub, Alexandre Merkulov and Wlodek Strupinski. Appl. Phys. Lett. 109, 011904 (2016).
http://scitation.aip.org/content/aip/journal/apl/109/1/10.1063/1.4958144

SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David and Jean-Paul Barnes. J. Vac. Sci. Technol. B 34, 03H131 (2016).
http://dx.doi.org/10.1116/1.4944632 

Kr implantation into heavy ion irradiated monolithic UeMo/Al systems: SIMS and SEM investigations. T. Zweifel, N. Valle, C. Grygiel, I. Monnet, L. Beck, W. Petry (2016), Journal of Nuclear Materials, Volume 470, Pages 251-257. doi:10.1016/j.jnucmat.2015.12.039.

Ion beam characterizations of plasma immersion ion implants for advanced nanoelectronic applications. M. Veillerot, F. Mazen, N. Payen, J.P. Barnes, F. Pierre (2014), SIMS Europe 2014, September 7-9, 2014.

Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer (2014), 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011.

Cesium/Xenon dual beam sputtering in a Cameca instrument. R. Pureti, B.Douhard, D.Joris, A.Merkulov and W.Vandervorst. Surface and Interface Analysis. Volume 46, Issue S1, pages 25–30, November 2014

Si- useful yields measured in Si, SiC, Si3N4 and SiO2: comparison between the Strong Matter technique and SIMS. B.Kasel and T.Wirtz. Surface and Interface Analysis. Volume 46, Issue S1, pages 39–42, November 2014 

Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding. K. Wittmaack. Surface Science Reports. Volumn 68, Issue 1, pages 108–230, 1 March 2013

The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen. A. Merkulov. Surface and Interface Analysis. Volume 45, Issue 1, pages 90–92, January 2013

Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surface and Interface Analysis. Volume 45, Issue 1, pages 345–347, January 2013 

Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5138.

The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen. A. Merkulov. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5132 

Experimental studies of dose retention and activation in fin field-effect-transistor-based structures. Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, and Wilfried Vandervorst (2010), Journal of Vacuum Science & Technology B, Volume 28, Issue 1. C1H5. doi: 10.1116/1.3269755.

Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs. M.J.P. Hopstaken, M.S. Gordon, D. Pfeiffer, D.K. Sadana, T. Topuria, P.M. Rice, C. Gerl, M. Richter, C. Marchiori. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 28, Issue 6, 1287, 18 November 2010

Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants. A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588

Chemical Erosion and Transport: Transport and Deposition of First Wall Impurities. Francesco Ghezzi (2009), CONSIGLIO NAZIONALE DELLE RICERCHE. TASK PWI-08-TA-06. 

Long-term Reproducibility of Relative Sensitivity Factors Obtained with CAMECA Wf. D. Gui, ZX Xing, YH Huang, ZQ Mo, YN Hua, SP Zhao, LZ Cha. Applied Surface Science, Volume 255, Issue 4, Pages 1427–1429 (2008)

EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology. W.Vandervorst, R.Vos, A.J.Salima, A.Merkulov, K. Nakajimac and K.Kimura. Proceedings of the 17th International Conference on Ion Implentation Technology, IIT 2008, Monterey, CA, USA. AIP Conf. Proc. Vol. 1066 (2008), 109-112

Semiconductor profiling with sub-nm resolution: challenges and solutions. W.Vandervorst, App. Surf. Science 255 (2008) 805

Roughness development in the depth profiling with 500eV O2 beam with the combination of oxygen flooding and sample rotation. D. Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1433

Depth profiling of ultra-thin oxynitride date dielectrics by using MCs2+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha (2008), App. Surf. Science, Volume 255, Issue 4, Pages 1437-1439. doi:10.1016/j.apsusc.2008.06.047.

Impurity measurement in silicon with D-SIMS and atom probe tomography. P.Ronsheim, App. Surf. Science 255 (2008) 1547. 

SIMS depth profiling of boron ultra shallow junctions using oblique O2 beam down to 150eV. M.Juhel, F.Laugier, D.Delille,C.Wyon, L.F.T.Kwakman and M.Hopstaken, App. Surf. Science 252 (2006), 7211

Boron ultra low energy SIMS depth profiling improved by rotating stage. M.Bersani, D.Guibertoni, at al, App. Surf. Science 252 (2006) 7315

Comparison between SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. M.Bersani, D.Guibertoni, et al, App. Surf. Science 252 (2006) 7214

SIMS Depth Profiling of SiGe:C structures in test pattern areas using low energy Cs with a Cameca Wf , M.Juhel, F. Laugier, App. Surf. Science 231-232 (2004) 698

Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers. P.A.Ronsheim, R.Loesing and A.Mada, App. Surf. Science 231-232 (2004) 762

Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

Accurate on-line depth calibration with laser interferometer during SIMS profiling experiment on the CAMECA IMS Wf instrument. O. Merkulova, A. Merkulov, M. Schuhmacher, and E. de Chambost. SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 954–958

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953

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• Methods / Instrumentation

You are welcome to send us any missing references, pdf and supplements! Please email cameca.info@ametek.com.

Dynamic SIMS for materials analysis in nuclear science. P. Peres, S-Y Choi, F. Desse, P. Bienvenu, I. Roure, Y. Pipon, C. Gaillard, N. Moncoffre, L. Sarrasin, and D. Mangin
Journal of Vacuum Science & Technology B 36, 03F117 (2018); doi: 10.1116/1.5017027

SIMS analysis of irradiated HTR fuel. S. Brémier, M. Laurie, R. Hasnaoui and A. El Abjani (2015), SIMS XX Poster Presentation, Sept. 13-18, 2015.

Evidence of tellurium iodide compounds in apower-ramped irradiated UO2 fuel rod. L. Desgranges, Ch. Riglet-Martial, I. Aubrun, B. Pasquet, I. Roure, J. Lamontagne, T. Blay (2013), Journ al of Nuclear Materia ls, Volume 437, Issue 1-3, Pages 409-414. doi:10.1016/j.jnucmat.2013.02.059.

Measurement of energy spectra on irradiated polycrystalline UO2 samples using secondary ion mass spectrometry. I. Roure, B. Pasquet, L. Desgranges, Ph. Bienvenu (2012), Surface and Interface Analysis, Volume 45, Issue 1, Pages 427-429. DOI: 10.1002/sia.5115.

Microbeam analysis of irradiated nuclear fuel. C T Walker, S Brémier, P Pöml, D Papaioannou, P W D Bottomley (2012), EMAS 2011: 12th European Workshop on Modern Developments in Microbeam Analysis, IOP Conf. Series: Materials Science and Engineering, Volume 32, 012028. doi:10.1088/1757-899X/32/1/012028.

High burnup changes in UO2 fuels irradiated up to 83 GWD/T in M5® claddings. J. Noirot, I. Aubrun, L. Desgranges, K. Hanifi, J. Lamontagne, B. Pasquet, C. Valot, P. Blanpain, H. Cognon (2009), Nuclear Engineering and Technology, Volume 41, No.2, March 2009 – Special Issue on the Water Reactor Fuel Performance Meeting 2008.

SIMS characterisation of actinide isotopes in irradiated nuclear fuel. L. Desgranges, B. Pasquet, Ch. Valot, I. Roure (2009), Journal of Nuclear Materials, Proceedings of a Topical Conference on Plutonium and Actinides: Plutonium Futures - The Science 2008, Volume 385, Issue 1, Pages 99-102. doi:10.1016/j.jnucmat.2008.09.032.

SIMS analysis of an UO2 fuel irradiated at low temperature to 65 MWd/kgHM. C.T. Walker, S. Bremier, S. Portier, R. Hasnaoui, W. Goll (2009). Journal of Nuclear Materials, Volume 393, Issue 2, Pages 212-223. doi:10.1016/j.jnucmat.2009.06.017.

Investigation of the relative sensitivity factor for the quantification of ion microprobe results for Nd isotopes in simulated nuclear fuel. Stéphane Portier, Stéphane Brémier, Rachid Hasnaoui, Olivier Bildstein, Clive T. Walker (2008), Microchimica Acta, Volume 161, Issue 3-4, Pages 479-483. DOI10.1007/s00604-007-0895-8.

A method for the quantification of total xenon concentration in irradiated nuclear fuel with SIMS and EPMA. Lionel Desgranges, Christophe Valot, Bertrand Pasquet, Jérôme Lamontagne, Thierry Blay, Ingrid Roure (2008), Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, Volume 266, Issue 1, Pages 147-154. doi:10.1016/j.nimb.2007.10.035.

Assessment of the Nd/U ratio for the quantification of neodymium in UO2. L. Desgranges, B. Pasquet, I. Roure, S. Portier, S. Brémier, C.T.Walker, R. Hasnaoui, D. Gavillet, M. Martin, L. Raimbault (2008), Applied Surface Science, Volume 255, Issue 4, Pages 863-865. doi:10.1016/j.apsusc.2008.05.196.

Detailed characterisations of high burn-up structures in oxide fuels. J. Noirot, L. Desgranges, J. Lamontagne (2008), Journal of Nuclear Materials, Volume 372, Issues 2-3, Pages 318-339. doi:10.1016/j.jnucmat.2007.04.037.

Study of structural material resulting from the nuclear fuel cycle using SEM-WDX, EPMA and SIMS techniques. Jérôme Lamontagne, Catherine Eysseric, Lionel Desgranges, Christophe Valot, Jean Noirot, Thierry Blay, Ingrid Roure, Bertrand Pasquet (2008), Microchimica Acta, Volume 161, Issue 3, Pages 355-362. DOI10.1007/s00604-007-0852-6.

SIMS analysis of 83Kr implanted UO2. S. Portier, S. Brémier, R. Hasnaoui, O. Bildstein, C.T. Walker (2008), Applied Surface Science, Volume 255, Issue 4, Pages 1323-1326. doi:10.1016/j.apsusc.2008.05.263.

Secondary ion mass spectrometry of irradiated nuclear fuel and cladding: An overview. S. Portier, S. Brémier, C.T. Walker (2007). International Journal of Mass Spectrometry, Volume 263, Issues 2-3, Pages 113-126. doi:10.1016/j.ijms.2007.01.016.

Fission Gas Bubbles Characterisation in Irradiated UO2 Fuel by SEM, EPMA and SIMS. Jérôme Lamontagne, Lionel Desgranges, Christophe Valot, Jean Noirot, Thierry Blay, Ingrid Roure, Bertrand Pasquet (2006), Microchimica Acta, Volume 155, Pages 183-187. DOI 10.1007/s00604-006-0540-y.

Installation of a Shielded SIMS for the Analysis of Irradiated Nuclear Fuels. Stéphane Brémier, Rachid Hasnaoui, Stéphane Portier, Olivier Bildstein, and Clive T. Walker. (2006), Microchimica Acta, Volume 155, Pages 113-120. DOI 10.1007/s00604-006-0527-8.

A shielded SIMS in CEA : a new tool for the low abundant isotopes characterization. L.Desgranges, B.Pasquet (2005), ATALANTE 2004, P2-17.
Characterisation of irradiated nuclear fuel with SIMS. L. Desgranges, Ch.Valot, B.Pasquet (2005), Applied Surface Science, Volume 252, Issue 19, Pages 7048-7050. doi:10.1016/j.apsusc.2006.02.256.

Detection of Gas Bubble by SIMS in Irradiated Nuclear Fuel. Jérôme Lamontagne, Jean Noirot, Lionel Desgranges, Thierry Blay, Bertrand Pasquet, Ingrid Roure (2004), Microchimica Acta, Volume 145, Issue 1, Pages 91-94. DOI 10.1007/s00604-003-0135-9.

Measurement of xenon in uranium dioxide (UO2) with SIMS. L. Desgranges, B. Pasquet (2004), Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Volume 215, Issues 3-4, Pages 545-551. doi:10.1016/j.nimb.2003.08.033.

A new shielded SIMS instrument for analysis of highly radioactive materials. B. Rasser, L, Desgranges, B. Pasquet (2003), Applied Surface Science, Secondary ion mass spectrometry SIMS XIII, Volume 203-204, Pages 673-678. doi:10.1016/S0169-4332(02)00789-4.

One Year of Operation of the Shielded SIMS with Irradiated Materials in the LECA Facility. L.Desgranges, B.Pasquet (2003), Proceedings of the Plenary Meeting 2003, European Working Group " Hot Laboratories and Remote Handling".

Installation of a shielded SIMS in CEA Cadarache. L. Desgranges, B. Pasquet, B. Rasser (2001).