Basic principles of Dynamic SIMS, allowing bulk composition and depth distribution of trace elements with a depth resolution ranging from sub-nm to tens of nm.
Fully automated SIMS with unequaled detection limits, optimized for challenging applications such as glass, metals, ceramics, Si-based, III-V, II-VI, bulk materials, thin films
Compact, high throughput SIMS instrument for measurements in geological samples, i.e. stable isotopes, REE (Rare Earth Elements), trace elements...
Large Geometry SIMS microprobe with unequalled analytical performance for geoscience applications: stable isotopes, trace elements, geochronology, particle analysis...
Geochronology-dedicated SIMS microprobe with benchmark sensitivity for in-situ U-Th-Pb isotopic analyses in a high throughput, easy-to-use platform.
SIMS microprobe for ultra fine feature analysis in materials, geology, planetary and life sciences
Full automated in-line SIMS performing on-the-fly composition measurements directly in the semiconductor fabrication lines.
High performance low energy SIMS tools for advanced semiconductor applications: extra shallow and high energy implants, ultra-thin oxides, high-k metal gate, SiGe, PV, LED, graphene
Quadrupole SIMS combining benchmark ultra shallow depth profiling capabilities with easy operation for semiconductor applications.
Shielded ion microprobe for safe manipulation and accurate isotopic and elemental analysis of radioactive samples.
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