Optimization of the Detection Limits for Light Elements (H,C,O) using Dynamic SIMS
Wednesday, January 22, 2020
This webinar focuses on the optimization of the detection limits for light elements (hydrogen, carbon, and oxygen atmospheric species) in silicon-based materials using dynamic SIMS. Information on H, C an d O low-level impurities introduced during processing and/or ageing is of major importance for a better understanding of semiconductor device lifetime and failure modes. Dynamic SIMS plays an important role in evaluating the concentration of impurities in solid samples because of its high sensitivity and depth profiling capabilities with high depth resolution and throughput, and the IMS 7f-Auto is designed to achieve optimized detection limits for light elements. Data presented in this webinar shows that significant improvement of H, C, and O detection limits in Si is achieved using the pre-sputtering method. Results obtained using multiple sample holders and the automated storage chamber are also presented.
↓ Duration : 25 minutes