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Semiconductor

Extreme sensitivity, low detection limits, high productivity... the CAMECA microanalytical instruments are recognized throughout the international IC community as best-in-class for investigation on new materials and structures for semiconductors. CAMECA also develops high performance process control systems supporting the high volume production of latest generation electronic devices.

Deep and shallow implant depth profiling (SIMS)

The IMS 7f-Auto is widely used for dopant monitoring in the semiconductor industry, and applied to different species and material systems.
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Impurity control (SIMS)

Dynamic SIMS is one of the most efficient techniques for measuring trace concentrations of impurities in semiconductors.
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Ultra shallow implant metrology (EXLIE SIMS)

EXtreme Low Impact Energy SIMS tools are used to monitor in-depth distributions of dopants.
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Atomic scale characterization of dopants (APT)

Atom Probe Tomography has the unique capability to map the spatial distribution and chemical identity of dopants in ever smaller transistor devices.
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3D FinFET metrology (LEXES)

The EX-300 Shallow Probe is uniquely able to detect composition variations in novel 3D structure devices (P/As in n-FET, Ge/B in p-FET...)
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MARKETS

Semiconductor

Deep and shallow implant depth profiling (SIMS)

Impurity control (SIMS)

Ultra shallow implant metrology (EXLIE SIMS)

Atomic scale characterization of dopants (APT)

3D FinFET metrology (LEXES)