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This webinar unveils a novel approach to routine monitoring of rapid thermal annealing (RTA) using secondary ion mass spectrometry (SIMS).
Our speaker, Jack Jiang, Principal Engineer at NXP Semiconductors, brings over 30 years of expertise in R&D and SIMS applications. Jack will share compelling examples and analysis to address a critical question: Is SIMS a good technique for routine monitoring of RTA?
Key learnings include:
- Issues with the common Rs monitoring method and the need for an alternative.
- Fundamentals of SIMS to achieve good sensitivity, good repeatability, and high throughput for reliable manufacturing support.
- The impact of SIMS on process stability and device yield.
Don’t miss this opportunity to discover how SIMS can enhance RTA monitoring and optimize semiconductor manufacturing processes.
About the Speaker
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Dr. Jack (Zhixiong) Jiang is a principle engineer in NXP Semiconductors. He has been committed to R&D and applications of SIMS for 30 years and published over 50 papers on SIMS fundamentals and applications. |