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Bulk Concentration of Atmospheric Species: Achieving Best Detection Limits using the D-SIMS Raster-Change Method – Application note

Tuesday, December 6, 2022

Due to its high sensitivity, ability for depth profiling at high throughput, and good detection limits, dynamic secondary ion mass spectrometry (D-SIMS) plays an important role in evaluating the concentration of impurities (H, C, O, etc.) in semiconductor materials. Using the raster-change method, one can further improve the detection limits for atmospheric elements

This application note explains the method and illustrates with recent bulk analysis of carbon in five silicon samples. This simple and powerful method can be applied to implanted samples by performing separate analyses using different raster values.