This webinar explores how atom probe tomography enables in‑depth analysis of off‑the‑shelf semiconductor devices, revealing nanoscale composition, dopant distributions, and interfaces critical to modern electronics.
Focusing on real, commercially available semiconductor components, this session demonstrates how advanced atom probe workflows provide quantitative, three‑dimensional insights beyond conventional characterization techniques. Attendees will see how APT overcomes the challenges associated with complex device architectures, heterogeneous materials, and shrinking feature sizes.
Learn how atom probe analysis supports failure analysis, technology benchmarking, and process verification by delivering high‑resolution, chemically precise data directly from finished devices. By enabling accurate nanoscale measurements at the device level, this approach strengthens data confidence, improves traceability, and supports both R&D and industrial semiconductor applications.
▶️ "Analysis of Off-the-Shelf Semiconductor Devices"
📅 March 31, 2026 - 05 PM CET (Paris)
⭐ Key learnings will include:
- How atom probe tomography enables compositional analysis of off‑the‑shelf semiconductor devices
- Quantitative 3D dopant and interface characterization at the nanoscale
- Overcoming analytical challenges posed by advanced device architectures
- Using APT data to support failure analysis, benchmarking, and technology validation
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🎙️ About the speaker:
Dr. Christian Lavoie is a Principal Research Staff Member at IBM’s Watson Research Center, where he leads the Advanced Materials Characterization group. With over 30 years of experience, he develops materials and processes for semiconductor, AI, and quantum technologies, using innovative synchrotron x‑ray techniques to speed discovery and solve challenges in IBM’s most advanced device development and manufacturing. |