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Analysis of Hydrogen in Semiconductor Materials – Application note

Monday, January 19, 2026

CAMECA is pleased to announce the release of a new application note showcasing the unparalleled hydrogen depth profiling performance of the IMS 7f Auto. Leveraging advanced SIMS analytical protocols, the instrument delivers hydrogen sub ppm detection limits in Silicon and GaAs, enabling highly sensitive and reliable characterization of hydrogen in semiconductor materials.

The study highlights the optimized experimental conditions—including low vacuum background, effective pre-sputtering protocol, and high sputtering rate Cs⁺ primary ion bombardment—which together ensure excellent detection limits, highly reproducible measurements, along with high throughput (30 minutes to analyze down to ~7 μm).
With benchmark sensitivity for light elements and high automation for multi sample workflows, the IMS 7f Auto is a powerful tool for process control and R&D in microelectronics.

Read the full application note: Analysis of Hydrogen in Semiconductor Materials - AP #SIMS-016


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