β-Ga2O3 is a promising material for next-generation power electronics due to its ultrawide bandgap and high breakdown field. Silicon is an effective dopant for β-Ga2O3, suitable for lateral and vertical devices. Researchers focused on continuous Si doping in β-Ga2O3 epitaxial films on (010) and (001) substrates using a valved effusion cell. Dynamic Secondary Ion Mass Spectrometry (D-SIMS) was used to measure Si concentrations, revealing a spike at the film/substrate interface on (010) substrates.
Continuous doping with flat profiles was achieved, and stability was confirmed at temperatures over 1000 °C. On (001) substrates, a flat Si doping profile of 8.3 × 10^18 cm−3 was observed, highlighting high ionization efficiency. D-SIMS proved essential for accurate doping control, marking a significant advancement in power electronics material science and improving device performance and reliability.
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Power Electronics: Accurate characterization of Si-doped β-Ga2O3 epitaxial films
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