Dynamic Secondary Ion Mass Spectrometry (D-SIMS) detects doping ions in the matrix with excellent precision and reproducibility. However, when the sample matrix is not well conductive, charged particles may accumulate on the surface during SIMS analysis, preventing reliable depth profiling.
Scientists at WinTech Nano-Technology Services have worked on a methodology using the Normal-incidence Electron Gun (NEG) of the CAMECA D-SIMS tools.
Presented here are analytical results for three samples with SiN/SiO2 interlaced structures with this methodology that can be applied to other insulating multilayered samples using IMS 7f-Auto.
Read the open access paper:
Dynamic SIMS Applications in Multilayer Films.
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