Skip to content

APT of Oxide Semiconductors: Imaging Individual Dopant Atoms in a Complex Oxide - Application note

Wednesday, February 22, 2023

This application note presents recent investigations of dopant in complex oxide semiconductors. Analogous to classical semiconductors, the doping levels that determine the physical responses can be extremely low, i.e., on the order of just a few parts per billion. Atom probe tomography (APT) offers outstanding opportunities for quantitative imaging of such low concentrations due to its unique combination of spatial resolution, chemical accuracy and sensitivity.

Dennis Meier and team at Norwegian University of Science and Technology (NTNU) investigated titanium dopants in a complex oxide. They were able to image individual dopant atoms in a Ti Doped ErMnO3 structure, and to observe that Ti dopants occupy Mn positions, confirming previous theoretical studies based on density functional theory calculations.