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Semiconductor wafer analysis for advanced materials and device development

Semiconductor

Browse all applications for semiconductor & electronics

Extreme sensitivity, low detection limits, high productivity... the CAMECA microanalytical instruments are recognized throughout the international IC community as best-in-class for investigation on new materials and structures for semiconductors. CAMECA also develops high performance process control systems supporting the high volume production of latest generation electronic devices.

deep-and-shallow-depth-profiling-SIMS

Semiconductor

Deep and Shallow Implant Depth Profiling (SIMS) 

The IMS 7f-Auto is widely used for dopant monitoring in the semiconductor industry, and applied to different species and material systems.

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Impurity control SIMS depth profiles

Semiconductor

Impurity Control with SIMS – High-Performance Trace Analysis for Light Elements

Impurity control is essential in semiconductor manufacturing to ensure device reliability, performance stability, and yield optimization.

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Ultra-shallow-implant-SIMS-EXLIE

Semiconductor

Ultra Shallow Implant Metrology (EXLIE SIMS)

EXtreme Low Impact Energy SIMS tools are used to monitor in-depth distributions of dopants.

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Semi-dopant-APT

Semiconductor

Atomic Scale Characterization of Dopants (APT)

Atom Probe Tomography has the unique capability to map the spatial distribution and chemical identity of dopants in ever smaller transistor devices.

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At IHPP PAS (Unipress), we work on nitride semiconductors—from gallium nitride (GaN) crystals to advanced devices such as laser diodes. SIMS testing is fundamental to our research, allowing us to assess material purity and precisely control the implantation of acceptor dopants like magnesium into GaN substrates... As we continue exploring new directions in GaN-based technologies, SIMS will remain a key tool for guiding our material development and process optimization. "
Artur Lachowski
High Pressure Research Center of the Polish Academy of Sciences, Warsaw, Poland
The high quality of the phosphorus depth profiles obtained by SIMS enabled us to evidence dopant redistribution mechanisms, with a fineness beyond our hopes. "
Dr. Sebastien Kerdiles
CEA-LETI, France
Among the various techniques employed at the CEA-Grenoble NanoCharacterization Platform (PFNC), dynamic SIMS maintains a leading role in supporting the development of emerging nanotechnologies, thanks to its exceptional sensitivity and superior depth resolution. "
Marc Veillerot
CEA LETI, France
Among all characterization techniques used, SIMS uniquely enabled direct verification that helium incorporation remained minimal and that implanted or incorporated helium could diffuse out during laser processing or subsequent annealing. "
Prof. Ji-Hong Zhao
Jilin University, Changchun, China
AKONIS monitors Ge concentration variations during etching and estimates the percentage of Ge remaining. Its superior single detection system and unique high extraction field technology provide a very high dynamic range with unparalleled depth, resolution, and sensitivity. "

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