AKONIS
Fully Automated SIMS for High-Volume Semiconductor Manufacturing
The AKONIS SIMS tool fills a critical gap in semiconductor fabrication processes by providing high throughput, high precision detection for implant profiles, composition analysis and interfacial data to enable high-volume manufacturing. AKONIS provides a very high level of automation to ensure repeatability across tools for fab level process control and tool-to-tool matching.
Product Details
Complementing the IMS Wf & SC Ultra as well as the SIMS 4550 (quadrupole SIMS) used to support the semiconductor industry via characterization labs, AKONIS - with full automation of instrument set-up and acquisition routines - enables rapid, within-fab analysis without compromise in analytical sensitivity. AKONIS benefits from recent development in EXtremely Low Impact Energy (EXLIE) ionic column technology (< 150 eV), coupled with a full wafer handling system including a high resolution stage enabling measurements on pads down to 20 μm.
The high yield enabler on N5 and beyond
High resolution composition and fast dopant depth profiling of SiGe and SiP multilayer stacks
Unrivalled in pad detection limits down to 20 μm
More than 97% of time reduction to feedback data to the process line
Blanket and patterned full wafer measurement
Pattern recognition engine coupled with high resolution interferometric stage for < 2 μm position accuracy
Intuitive recipe creation based on unique material database
SEMI certified (S2/S8, E4, E5, E39, E84...)
Low cost of ownership
Benefits
Discover the key advantages that set our solution apart. From increased efficiency to exceptional support, these benefits are designed to deliver real value and help you achieve more with confidence.
Webinars
Dynamic SIMS for Semiconductors
A review of a broad array of IC applications with Dynamic SIMS, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures. Speaker: Pawel Michałowski, expert-user of CAMECA SC Ultra SIMS at Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Poland
Downloads
Application Note
Arsenic Shallow Implant Monitoring
Compositional Measurement of Confined SiGe Devices
Compositional Measurement of Thin Multilayers in Patterned Wafer Pads
SiP Shallow Implant Metrology for n‑mos Logic Production
Statistical Process Control of p-mos Logic (B:SiGe Monitoring)
Flyer
AKONIS
White Paper
Enabling Fast, Accurate Analysis for Semiconductor HVM
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