IMS Wf & SC Ultra
SIMS for Advanced Semiconductor Applications
The IMS Wf and SC Ultra have been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors. Offering a large range of impact energies (100 eV to 10 keV) with no compromise on mass resolution and primary beam density, they ensure unequalled analytical performance at high throughput for the most challenging applications: extra shallow & high energy implants, ultra-thin nitride oxides, high-k metal gates, SiGe doped layers, Si:C:P structures, PV & LED devices, graphene, etc...
Product Details
From standard to ultra-shallow depth profiling
A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a unique SIMS instrument design capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...).
The CAMECA IMS Wf and SC Ultra are the only SIMS instrument offering such EXtreme Low Impact Energy (EXLIE) capabilities with no compromise on high mass resolution and high transmission.
High automation level
As SIMS technique matures, users want to reduce the expertise required to achieve high reproducibility and high precision measurements. The trend is clearly toward unattended, automated analysis. The CAMECA IMS Wf and SC Ultra face this challenge with computer automation ensuring full control of all analytical parameters (analysis recipe, instrument set-up, etc...).
The airlock system, sample stage and analysis chamber have been optimized to accommodate wafers up to 300 mm (IMS Wf model), and to load a high number of samples in one batch - up to 100 in the IMS Wf model which also offers fully motorized transfer between the airlock and the analysis chamber.
Thanks to their high level of automation, the IMS Wf and SC Ultra perform fast deep depth profiling with optimized sample throughput and excellent measurement stability, ensuring unprecedented SIMS tool productivity.
Benefits
Discover the key advantages that set our solution apart. From increased efficiency to exceptional support, these benefits are designed to deliver real value and help you achieve more with confidence.
Webinars
Secondary Ion Mass Spectrometry Measurements with a Large Scale-to-Resolution Ratio
Exploring the deepest SIMS depth profile ever registered by SIMS with Paweł Michałowski, from Łukasiewicz - IMiF.
Secondary Ion Mass Spectrometry Characterization of MAX and MXene Samples
Learn with Paweł Michałowski why novel ultra-thin 2D materials are so attractive for applications ranging from energy storage to electronics and medicine, how compositional variability and the interaction of surface termination layers affect fine-tuning of MAX and MAXenes properties and how ultra-low energy Secondary Ion Mass Spectrometry can facilitate further development of MAX and MXenes.
Dynamic SIMS for Semiconductors
A review of a broad array of IC applications with Dynamic SIMS, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures. Speaker: Pawel Michałowski, expert-user of CAMECA SC Ultra SIMS at from Łukasiewicz - IMiF.
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