Ultra-Shallow Implant Metrology with EXLIE SIMS

The Application

Ultrashallow implant metrology is critical for validating dopant distribution in the newest CMOS and semiconductor device technologies. As junction depths shrink below 10 nm, precise characterization becomes essential to confirm implant distribution, assess activation, and ensure process repeatability.

The Challenge

Modern chip manufacturing demands shallow junctions with steep concentration gradients—often as sharp as 1–2 nm per decade. At this scale, even minimal ion beam-induced mixing can distort the measured profile. Traditional techniques cannot reliably achieve subnanometer depth resolution or maintain accuracy near the surface. Manufacturers need a near-surface analytical technique that provides a true indepth concentration profile with both high dynamic range and minimal measurement-induced artifacts.

Our Unique Solution

CAMECA’s EXLIE (EXtreme Low Impact Energy) SIMS, enabled by innovations in the IMS Wf & SC Ultra instruments, delivers unmatched depth resolution for ultrashallow profiling. Our approach uniquely provides:

• Subnanometer depth resolution, revealing the real concentration distribution of implanted dopants.
• Ultralow impact energy capabilities with primary ion energies down to 150 eV for Cs⁺ and O₂⁺ beams.
• High beam density at low energy, with sputter rates around 1 nm/min, for improving both sensitivity and repeatability.
• High dynamic range for true profile integrity, to capture steep gradients and low concentration regions in one continuous profile.

Dynamic SIMS, when operated at extremely low impact energies, offers the depth resolution needed to reveal the true near surface dopant distribution—critical for device optimization.

Case Study

EXLIE SIMS depth profiling was performed on ultrashallow implants of arsenic, phosphorus, and boron at 150 eV impact energy. These profiles reveal the true dopant distribution within the first 10 nm of the surface with subnanometer resolution. The results clearly demonstrate the capability of EXLIE SIMS to deliver high dynamic range measurements that preserve nearsurface accuracy, validating its effectiveness for next generation device metrology.

Depth profiling of B, P and As shallow implants in silicon using ultra-low impact energy (150eV) conditions. Results reveal the true distribution within the first 10nm and show an excellent dynamic range (>4 decades). Data collected on SC Ultra at CAMECA factory.

BestFit Product: CAMECA SC Ultra & IMS Wf

The IMS Wf & SC Ultra platforms are engineered for EXLIE SIMS, offering unprecedented control of primary ion energies and beam density. These instruments deliver the performance required for ultrashallow junction characterization, combining high depth resolution, stability, and optimized dynamic range. They are the ideal tools for fabs and R&D facilities working at the forefront of semiconductor scaling.

Learn More

Looking to achieve true subnanometer resolution for your ultrashallow implant profiles?

👉 Contact our experts today to discuss your analytical needs, request a demo, or obtain detailed technical specifications.

👉 Download the IMS Wf & SC Ultra brochure and access our documentation, blogs and webinars to explore performance data and real-world case studies.