IMS 7f-Auto

Versatile SIMS Tool: Reference Detection Sensitivity with High Throughput

 

Designed to deliver high precision elemental and isotopic analyses with increased ease-of-use and productivity, it has been optimized for challenging applications such as glass, metals, ceramics, Si-based, III-V and II-VI devices, bulk materials, thin films... fulfilling industry requirements for efficient device development and process control.

CAMECA IMS 7f‑Auto SIMS instrument

Product Details

Key analytical features for solving a wide range of analytical problems

The IMS 7f-Auto offers unparalleled depth profiling capabilities with high depth resolution and high dynamic range. The high transmission mass spectrometer is combined with two reactive, high-density ion sources, O2+ and Cs+, thus providing high sputter rate and excellent detection limits. A unique optical design allows both direct ion microscopy and scanning microprobe imaging.

 

Improved automation & operation efficiency

The IMS 7f-Auto is equipped with a redesigned, in-line primary column for easier and faster primary beam tuning and optimized primary beam current stability. New automated routines minimize operator related biases and improve ease-of-use. A motorized storage chamber with automated load / unload of sample holders ensures high throughput through analysis chaining and remote operation.

 

High reproducibility at high throughput

Thanks to its new motorized storage chamber & sample transfer, the IMS 7f-Auto can analyze multiple samples in chained or remote mode. Measurements can be fully unattended and automated, with unequalled throughput and reproducibility. Ultimate reproducibility can be achieved (RSD < 0.5 %), together with excellent detection limits, high throughput and productivity (tool can be used 24h a day with minimum operator intervention).

Benefits

Discover the key advantages that set our solution apart. From increased efficiency to exceptional support, these benefits are designed to deliver real value and help you achieve more with confidence.

SIMS-Depth profiling
Depth profiling
SIMS-High Sensitivity
High sensitivity
SIMS-24/7 unattended use
24/7 unattended use
Dual primary ions
Dual primary ions
Illustration showing an interactive webinar with a presenter, live reactions, chat icons, and audience participation

Dynamic SIMS for Ion Implants: Fundamental Concepts and Applications

A technical webinar on ion implant use for SIMS quantification and common pitfalls, co-hosted by Loughborough Surface Analysis Ltd and CAMECA.

Illustration showing an interactive webinar with a presenter, live reactions, chat icons, and audience participation

Enhanced Characterization of Very Deep Proton Implants with Dynamic SIMS

Explore the superior capabilities of Dynamic SIMS for analyzing low-dose deep proton implants in industrially relevant silicon with Orazio Samperi, University of Catania/ST Microelectronics.

Illustration showing an interactive webinar with a presenter, live reactions, chat icons, and audience participation

SIMS Analysis of an Oxide Thin Film with Continuous Composition Gradient

Explore the application of Dynamic SIMS on thin film analysis with our speaker Joseph Scola, from the University of Paris-Saclay/UVSQ.

Downloads

Application Note

Analysis of Hydrogen in Semiconductor Materials

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Bulk Study of Atmospheric Species by Raster-Change Method

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D-SIMS Analysis of Electrochemical Sensors

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Helium Behavior in Structural Materials

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Improved Dopant Quantification in Insulating Thin Films

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Investigating Magnesium Diffusion in GaN with Dynamic SIMS

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Ion Transport Mechanism in Lithium Batteries

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Light Elements Analysis

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Materials Analysis in Nuclear Science

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Nuclear Safeguards: Pu Isotopic Analyses

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Nuclear Science Fission Products Behavior

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Power Electronics - Si‑doped Beta‑Ga₂O₃

PDF

Silicon Carbide: Optimized N Detection Limits

PDF

SIMS for LEDs

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Brochure

IMS 7f-Auto

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Success Story

Building Better Steels at ArcelorMittal

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Lithium Research at Tohoku University

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