Monitoring of Rapid Thermal Anneal (RTA) with SIMS
This webinar presents a new method for monitoring rapid thermal anneal (RTA) using SIMS, featuring insights from NXP’s Jack Jiang on sensitivity, repeatability, and process stability.
This webinar unveils a novel approach to routine monitoring of rapid thermal annealing (RTA) using secondary ion mass spectrometry (SIMS).
Our speaker, Jack Jiang, Principal Engineer at NXP Semiconductors, brings over 30 years of expertise in R&D and SIMS applications. Jack will share compelling examples and analysis to address a critical question: Is SIMS a good technique for routine monitoring of RTA?
Key learnings include:
- Issues with the common Rs monitoring method and the need for an alternative.
- Fundamentals of SIMS to achieve good sensitivity, good repeatability, and high throughput for reliable manufacturing support.
- The impact of SIMS on process stability and device yield.
Don’t miss this opportunity to discover how SIMS can enhance RTA monitoring and optimize semiconductor manufacturing processes.
