Enhanced Nitrogen Detection in Silicon Carbide Using Dynamic SIMS & Pre-Sputtering Protocol – Application note
This application note shows how Dynamic SIMS with pre‑sputtering enables significantly improved nitrogen detection in silicon carbide for advanced semiconductor analysis.
CAMECA introduces a new application note demonstrating advanced Dynamic SIMS analysis for nitrogen detection in silicon carbide (SiC), a critical material in high-power semiconductor devices. Leveraging the IMS 7f-Auto instrument and an optimized pre-sputtering protocol, our study demonstrates a significant improvement in detection limits (DLs) for nitrogen, a key n-type dopant in SiC.
Optimized pre-sputtering protocol for improved detection limits
Nitrogen is a key dopant for n-type SiC semiconductors. Accurate profiling is critical for optimizing device performance and reliability. Our study compares two analytical protocols, revealing that pre-sputtering significantly lowers nitrogen detection limits—by more than an order of magnitude.
High-resolution depth profiling with IMS 7f-Auto
Using pre-sputtering, the IMS 7f-Auto, we achieved a nitrogen DL of 1.4×10¹⁵ at/cm³, over 10 times lower than conventional methods. This breakthrough enables precise depth profiling in thick SiC structures, with high resolution and efficient analysis times.
IMS 7f-Auto, a reference tool for semiconductor material analysis
The IMS 7f-Auto proves to be a powerful tool for routine analysis of light elements in semiconductor materials, offering unmatched performance for researchers and engineers working with SiC-based technologies and other semiconductor materials.
