Small Area Analysis in Sn-Cu Wire Structures Using SIMS

Learn how SIMS delivers sub-micron resolution for small area analysis in Sn-Cu wire structures with dynamic ion imaging and depth profiling.

The Application

Small-area SIMS analysis is critical for understanding material behavior in Sn/Cu wire structures, widely used in electronics packaging and interconnects. By resolving diffusion pathways, intermetallic formation, and composition gradients at the micron scale, engineers can diagnose failures, optimize wire bonding processes, and ensure longterm device reliability.

The Challenge

Sn/Cu wire structures often contain microscale diffusion layers, phase boundaries, and localized defects that are too small or too complex for conventional imaging or analytical tools. Capturing both lateral and indepth elemental information requires high spatial resolution, high dynamic range, and flexible imaging modes. Traditional techniques fall short when fast large area mapping and micron elemental resolution are required simultaneously.

Our Unique Solution

CAMECA’s IMS 7f-Auto instrument is engineered for high performance small area materials analysis, offering:

Scanning ion imaging mode for field of views from 500×500 µm² down to tens of µm2.
Lateral resolution from micron to sub-micron range for detailed compositional imaging.
High dynamic range to visualize trace species alongside major elements.
Retrospective depth profiling from ion images using CAMECA WinImage software, providing both lateral and indepth information from a single dataset.
Sequential indepth sputtering for 3D compositional reconstruction of complex wire structures.

Based on the well-established SIMS technique, this platform provides a complete workflow for analyzing fine scale features in Sn/Cu devices.

Case Study

Using the microprobe mode, researchers captured high-resolution ion images of individual species within Sn/Cu wire structures. As sputtering progressed, sequential images were collected and processed in WinImage to generate a retrospective depth profile. This approach revealed both lateral compositional variations and indepth layering, demonstrating the instrument’s ability to resolve diffusion zones and interface evolution with high dynamic range.

Left: C, O, Cu, Sn scanning ion images on Sn/Cu wire structure. Field of view: 50 x 50 μm².
Right: Retrospective depth profiles obtained from the central area shown on the left.

Best-Fit Product: CAMECA IMS 7f-Auto

The IMS 7f-Auto delivers outstanding micron to submicron imaging performance combined with high sensitivity. Optimized for metals, alloys, ceramics, and semiconductor materials, it supports both large area fast and ultra-high-resolution imaging analysis. Its advanced ion optics, dual imaging modes, and compatibility with WinImage software make it the ideal solution for small area depth and surface analysis in patterned samples.

Learn More

Uncover microscale insights that traditional tools can’t reveal.

👉 Contact our experts today to discuss your analytical needs, request a demo, or obtain detailed technical specifications.

👉 Download the IMS 7f-Auto brochure and access our documentation, blogs and webinars to explore performance data and real-world case studies.