Segregation and Diffusion Analysis in Polycrystalline YAG with NanoSIMS
Discover how NanoSIMS reveals oxygen diffusion and silicon dopant segregation in polycrystalline YAG using isotope tracers and high-sensitivity imaging.

The Application
In polycrystalline materials such as transparent YAG (yttrium aluminum garnet), understanding how elements migrate and segregate at grain boundaries is essential for optimizing material performance. These insights are crucial for improving advanced ceramics in optics, photonics, energy materials, and high performance structural components.
The Challenge
Polycrystalline materials are difficult to analyze because grain boundaries act as nanoscale diffusion pathways that conventional tools struggle to resolve. Detecting dopant segregation demands extremely high sensitivity and dynamic range, while accurate interpretation often requires simultaneous isotope and elemental analysis to link diffusion—such as ¹⁶O/¹⁸O ratios—with dopant distribution. Localized chemical changes at triple junctions further complicate the picture, as many techniques cannot capture these critical, microscale events.
Our Unique Solution
Based on the SIMS technique, CAMECA’s NanoSIMS-HR technology provides unmatched capabilities for studying segregation and diffusion in polycrystalline materials:
- High-resolution nanoscale imaging for investigating diffusion through grain boundaries.
- Exceptional sensitivity and wide dynamic range for detailed visualization of dopant segregation and its distribution across the polycrystalline structure.
- Parallel multi-isotope detection allows simultaneous mapping of the species of interest.
These capabilities make NanoSIMS-HR the only tool able to simultaneously resolve isotopic diffusion and dopant segregation with such precision.
Case Study
Through the combined use of NanoSIMS imaging and ¹⁸O isotope tracers, this study delivered high-resolution insights into oxygen incorporation and dopant behavior at the nanoscale. The results clearly illustrated ¹⁸O diffusion across ceramics during high-temperature oxidation, as well as silicon dopant segregation along grain boundaries and at triple junctions.

NanoSIMS ion images showing the segregation of silicon dopant toward grain boundaries in YAG samples after sintering. Upper row, middle and right images: same silicon image displayed in linear and logarithmic color scale. Lower row, middle image: zoom from the upper row middle image. Lower row, right side image: another type of YAG sample showing dopant segregating to triple points. Data courtesy of Dr. Hajime Haneda, NIMS, Tsukuba, Japan.
Best-fit product: CAMECA NanoSIMS-HR
The NanoSIMS-HR is the ideal instrument for polycrystalline material studies because it provides:
- Lateral resolution down to 30 nm, essential for imaging at small scale.
- Simultaneous detection of up to seven masses.
- Sub-ppm elemental sensitivity, for both light and heavy elements.
High transmission at high mass resolution, for effectively removing mass interferences.
Whether you're tracking diffusion pathways or mapping dopant accumulation, the NanoSIMS-HR provides the precision and imaging capabilities required for advanced materials research.
Learn More
Ready to advance your understanding of diffusion and segregation in polycrystalline materials?
👉 Contact our experts today to discuss your analytical needs, request a demo, or obtain detailed technical specifications.
👉 Download the NanoSIMS-HR flyer and access our documentation, blogs and webinars to explore performance data and real-world case studies.
