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LEXES

  • EX-300 Shallow Probe +


    A selection of publications on LEXES and Shallow Probe
    Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011

    Implantation and metrology solutions for low energy boron implant on 450mm wafers. A-S. Robbes, , K-A B-T. Meura, M-P. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940018

    Comparison of Different Characterization Techniques for Plasma Implanted Samples having Highly Doped and Shallow Implanted Layers: Dose Measurement, Profile, Etching or Deposition Characterizations.
    F. Torregrosa, C. Grosjean, N. Morel, M.P. Moret, M. Schuhmacher, Y. Depuydt, Y. Spiegel, H. Etienne, S.B. Felch, J. Duchaine, L. Roux, B. Bortolotti, R.Daineche, 18th International Conference on Ion Implantation Technology IIT 2010. AIP Conference Proceedings, Volume 1321, pp. 161-166 (2011)

    Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Loibl, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), Feb 2010

    Addressing the challenges in elemental composition, thickness determination, and dopant dosimetry from FE to BE. Mona P. Moret, Chrystel Hombourger, Francois Desse, Rabah Benbalagh, Valerie Paret, Michel Schuhmacher, Semiconductor Fabtech, 37th edition, Volume 2, June 2008

    The low energy X-ray Spectrometry technique as applied to semiconductors. Pierre-Francois Staub, Microscopy and Microanalysis, 12, 1-7, 2006

    Dopant dose metrology for ultra-shallow implanted wafers using electron-induced X-ray spectrometry at pattern-size scale.
    P.F. Staub, R. Benbalagh, F. Desse, C. Hombourger, M. Schuhmacher. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

    In-line quantitative dose metrology of ultra thin gate oxides.
    Y. Jee et al. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

    Quantitative determination of dopant dose in ultra-shallow implants using the LEXES technique. P.F. Staub, C. Hombourger, M. Schuhmacher, J. Vac. Sci. Technol. B, January 2001

    LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures.
    C. Hombourger, P.F. Staub, M. Schuhmacher, F. Desse, E. de Chambost, C. Hitzman, Proceedings of SIMS XIII, Nara, Japan, November 2001