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Inhomogeneous oxidation of silicon carbide

Cross-sectional view of SiC samples after thermal oxidation. The top part is fully oxidized, and the formation of stoichiometric SiO2 is confirmed. The middle layer is inhomogeneous, and concentrations of oxygen and carbon are inversely proportional. The lower part is unaffected SiC substrate. 

Recorded on CAMECA SC Ultra at Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Warsow, Poland. Image courtesy of Paweł Piotr Michałowski.
P. Kamiński et al. Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on 4H-SiC. Journal of Materials Chemistry C9, 4393-4404 (2021).