IMS Wf & SC Ultra

High Performance Low Energy SIMS for Advanced Semiconductor Applications
The IMS Wf and SC Ultra have been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors. Offering a large range of impact energies (100 eV to 10 keV) with no compormise on mass resolution and primary beam density, they ensure unequalled analytical performance at high throughput for the most challenging applications: extra shallow & high energy implants, ultra-thin nitride oxides, high-k metal gates, SiGe doped layers, Si:C:P structures, PV & LED devices, graphene, etc...
  • Product Overview +

    From standard to ultra-shallow depth profiling
    A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a unique SIMS instrument design capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...).

    The CAMECA IMS Wf and SC Ultra are the only SIMS instrument offering such EXtreme Low Impact Energy (EXLIE) capabilities with no compromise on high mass resolution and high transmission.

    High automation level
    As SIMS technique matures, users want to reduce the expertise required to achieve high reproducibility and high precision measurements. The trend is clearly toward unattended, automated analysis. The CAMECA IMS Wf and SC Ultra face this challenge with computer automation ensuring full control of all analytical paramaters (analysis recipe, instrument set-up, etc...).

    The airlock system, sample stage and analysis chamber have been optimized  to accommodate wafers up to 300 mm (IMS Wf model), and to load a high number of samples in one batch -  up to 100 in the IMS Wf model which also offers fully motorized transfer between the airlock and the analysis chamber.

    Thanks to their high level of automation, the IMS Wf and SC Ultra perform fast deep depth profiling with optimized sample throughput and excellent measurement stability, ensuring unprecedented SIMS tool productivity.
  • See what the IMS Wf and SC Ultra can do +

  • Documentation +

  • Scientific publications +

    Below is a selection of research articles by users of CAMECA IMS Wf and SC Ultra

    You are welcome to send us any missing references, pdf and supplements!
    Please email

    Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC. Pawel Piotr Michalowski, Wawrzyniec Kaszub, Alexandre Merkulov and Wlodek Strupinski. Appl. Phys. Lett. 109, 011904 (2016)

    SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David and Jean-Paul Barnes. J. Vac. Sci. Technol. B 34, 03H131 (2016). 

    Kr implantation into heavy ion irradiated monolithic UeMo/Al systems: SIMS and SEM investigations. T. Zweifel, N. Valle, C. Grygiel, I. Monnet, L. Beck, W. Petry (2016), Journal of Nuclear Materials, Volume 470, Pages 251-257. doi:10.1016/j.jnucmat.2015.12.039.

    Ion beam characterizations of plasma immersion ion implants for advanced nanoelectronic applications. M. Veillerot, F. Mazen, N. Payen, J.P. Barnes, F. Pierre (2014), SIMS Europe 2014, September 7-9, 2014.

    Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer (2014), 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011.

    Cesium/Xenon dual beam sputtering in a Cameca instrument.
    R. Pureti, B.Douhard, D.Joris, A.Merkulov and W.Vandervorst. Surface and Interface Analysis. Volume 46, Issue S1, pages 25–30, November 2014

    Si- useful yields measured in Si, SiC, Si3N4 and SiO2: comparison between the Strong Matter technique and SIMS. B.Kasel and T.Wirtz. Surface and Interface Analysis. Volume 46, Issue S1, pages 39–42, November 2014 

    Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding. K. Wittmaack. Surface Science Reports. Volumn 68, Issue 1, pages 108–230, 1 March 2013

    The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen. A. Merkulov. Surface and Interface Analysis. Volume 45, Issue 1, pages 90–92, January 2013

    Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surface and Interface Analysis. Volume 45, Issue 1, pages 345–347, January 2013 

    Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5138.

    The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen. A. Merkulov. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5132 

    Experimental studies of dose retention and activation in fin field-effect-transistor-based structures. Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, and Wilfried Vandervorst (2010), Journal of Vacuum Science & Technology B, Volume 28, Issue 1. C1H5. doi: 10.1116/1.3269755.

    Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs.
    M.J.P. Hopstaken, M.S. Gordon, D. Pfeiffer, D.K. Sadana, T. Topuria, P.M. Rice, C. Gerl, M. Richter, C. Marchiori. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 28, Issue 6, 1287, 18 November 2010

    Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants.
    A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588

    Chemical Erosion and Transport: Transport and Deposition of First Wall Impurities. Francesco Ghezzi (2009), CONSIGLIO NAZIONALE DELLE RICERCHE. TASK PWI-08-TA-06. 

    EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology. W.Vandervorst, R.Vos, A.J.Salima, A.Merkulov, K. Nakajimac and K.Kimura. Proceedings of the 17th International Conference on Ion Implentation Technology, IIT 2008, Monterey, CA, USA. AIP Conf. Proc. Vol. 1066 (2008), 109-112

    Semiconductor profiling with sub-nm resolution: challenges and solutions. W.Vandervorst, App. Surf. Science 255 (2008) 805

    Roughness development in the depth profiling with 500eV O2 beam with the combination of oxygen flooding and sample rotation. D. Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1433

    Depth profiling of ultra-thin oxynitride date dielectrics by using MCs2+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha (2008), App. Surf. Science, Volume 255, Issue 4, Pages 1437-1439. doi:10.1016/j.apsusc.2008.06.047.

    Impurity measurement in silicon with D-SIMS and atom probe tomography. P.Ronsheim, App. Surf. Science 255 (2008) 1547. 

    SIMS depth profiling of boron ultra shallow junctions using oblique O2 beam down to 150eV. M.Juhel, F.Laugier, D.Delille,C.Wyon, L.F.T.Kwakman and M.Hopstaken, App. Surf. Science 252 (2006), 7211

    Boron ultra low energy SIMS depth profiling improved by rotating stage. M.Bersani, D.Guibertoni, at al, App. Surf. Science 252 (2006) 7315

    Comparison between SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. M.Bersani, D.Guibertoni, et al, App. Surf. Science 252 (2006) 7214

    SIMS Depth Profiling of SiGe:C structures in test pattern areas using low energy Cs with a Cameca Wf , M.Juhel, F. Laugier, App. Surf. Science 231-232 (2004) 698

    Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers. P.A.Ronsheim, R.Loesing and A.Mada, App. Surf. Science 231-232 (2004) 762

    Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

    Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

    Accurate on-line depth calibration with laser interferometer during SIMS profiling experiment on the CAMECA IMS Wf instrument. O. Merkulova, A. Merkulov, M. Schuhmacher, and E. de Chambost. SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 954–958

    Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953 


  • Some of our users +

    Below a small selection of IMS Wf and SC Ultra users. Many actors in the semiconductor industry wish to remain confidential and cannot appear here.

    ITC-irst (Fondazione Bruno Kessler), divisione FSC, Italy
    The FSC division led by Mariano Anderle develops and applies new surface analytical methodologies on last generation microelectronic devices and materials. It is involved in long term collaborations with several leading microelectronics companies. Masterpiece of the Materials and Analysis for Micro-Electronics lab under the direction of Massimo Bersani is a CAMECA IMS SC Ultra.

    CNT, Fraunhofer-Center Nanoelektronische Technologien, Dresden, Germany
    This public-private partnership between the Fraunhofer Gesellschaft and leading semiconductor manufacturers aims at developing new process technologies for nanoelectronics. It is equiped with state-of the-art instruments for materials charactrization, among which a CAMECA IMS Wf.

    Science and Analysis of Materials (SAM), Luxemburg
    A departement of Gabriel Lippmann public research center, SAM started its activities in 1992. Both a fundamental and applied research facility as well as an analytical service laboratory, it provides assistance to more than 100 industrial and academic partners worldwide. It is equipped with a CAMECA SC Ultra and a NanoSIMS 50.

  • Software +

    • WinCurve dataprocessing sofware

      Specifically developed for CAMECA SIMS instruments, WinCurve offers powerful data processing & visualization capabilities in a user-friendly environment.

      Keep Reading

    • WinImage Software
      WinImage II

      Specifically developed for CAMECA SIMS instruments, WinImage II offers powerful image visualization, processing & printing capabilities under PC-Windows™ Environment.

      Keep Reading

    • APM Software

      Automated Particle Measurement (APM) is CAMECA software tool allowing fast screening of millions of particles, particle detection and isotopic characterization.

      Keep Reading

  • Upgrade kits +

    Automation & Software - Sources - Airlock - Specimen Chamber

    Automation & Software

    PC-Automation (Wf/SCU)
    PC-Automation system to replace SUN system, allows full automation & unattended operation and greatly improves ease of use.
    Please note that most of the upgrade kits listed below can only be installed on IMS Wf  and SC Ultra instruments equipped with PC-Automation.

    PC station for off-line data treatement (CAMECA software not included).

    Additional PC, keyboard, CAMECA keypad, screens... ensuring optimized operation comfort when the lab is split in two parts.

    WinCurve Software (Wf/SCU)
    Offers powerful SIMS data processing & graphing capabilities together with easy report creation functionalities.

    WinImage Software (Wf/SCU)
    Offers powerful SIMS image processing functions, available in Standard or Extended version.

    Checkerboard Software Option (Wf/SCU)
    Greatly improves the quality of measurements for depth profile applications. For more information, download the technical note "Checkerboard Option" (1.7MB)

    Real Time Display software licence providing remote access to all instrumental parameters, thus allowing the operator to remotely tune and run the instrument from his/her own PC.

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    Low energy cesium ion source - CLEN 60 Upgrade (Wf/SCU)
    With this new high brightness cesium ion source, the IMS Wf/SCU can now perform Extremely Low Impact Depth Profiling and analyse ultra thin layers with nanometer depth resolution.

    Dual beam 60 Upgrade (Cs+Xe/O2) V1 & V2 (Wf/SCU)
    This kit allows to run the instrument in "co-sputtering" regime, i.e. using  two different ion species for depth profiling.
    V1 is available for instruments equipped with the 60° column DUO source, V2 for instruments equipped with a Cs source only.

    High brightness RF plasma gas source - RF-PLASMA 36 Upgrade (Wf/SCU)
    Compared to conventional DUO-plasmatron, the RF plasma source allows substantial performance improvements using ultra low energy O2 primary beam.

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    Automated loading system - CASS-LOAD/FS Upgrade (Wf)
    Wafer-loading cassette system with load port for 300mm FOUP. Automated handling of wafers from cassette to sample stage.

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    Specimen Chamber

    New immersion lens version 2 (Wf/SCU)
    Improves overall reliability and facilitates maintenance.

    Motorized Z-movement stage - MZMS (Wf/SCU)
    Replaces the piezo-stage movement

    Eucentric Rotating Stage - RS10 (Wf/SCU with PC-Automation and MZMS)
    Minimizes roughening effects which may occur with certain sputtering conditions and matrices.

    Turbo Detection (Wf/SCU)
    Turbomolecular pump to replace the existing ionic pump. Improves vacuum in the detection system.

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