EX-300 Shallow Probe

Front-end semiconductor compositional metrology solution for 22nm node and beyond
CAMECA's EX-300 is a unique LEXES based metrology tool supporting major semiconductor developments since the 90nm node era and following up the integration of the most diverse materials. It accelerates the time-to-market of your logic and memory devices and increases the integrated yield of your high volume production.
  • Product overview +

    The EX-300 benefits from over a decade of experience with LEXES technology in the semiconductor industry: dozens of LEXFAB-300 Shallow Probes have been installed at the top-ten semiconductor fabrication facilities worldwide. The EX-300 is targeted for new challenging applications such as SiGe and HKMG, and it is designed to accelerate the time to market of advanced logic & memory devices while achieving high production yield.

    The tool of choice for front-end process issues at 32nm node and beyond
    Based on the non-contact, non-destructive LEXES technique - a unique solution for direct measurement of the chemical composition at the surface and near surface - the EX-300 offers a panel of complementary capabilities enlarging the domains of classical metrology to current challenging processes:
    • Ultra shallow implants: Monitoring of low energy, high concentration implants
    • Strained silicon process control: Chemical composition and thickness in epitaxial layers such as B:SiGe and P:SiC, with no limitation in the layer composition
    • HKMG metrology: Both the oxides and the metal are controled by one single EX-300 platform

    CAMECA's EX-300 delivers enhanced long-term stability with excellent vacuum limit. The below graph shows reproducibility over several months for an average As dose of 1.97e15 at/cm2 with a global RSD (1σ) of 0.622%.

    Advanced and robust pattern analysis
    The EX-300 has been specifically designed to perform metrology of challenging patterned wafers down to 30x30µm pads.
    Higher brightness is achieved with the new LaB6 gun, thus ensuring denser small probe. Improved light source and optics and a new digital camera with zooming capabilities enable smooth visual navigation while the new electrostatic chuck secures wafer clamping.

    Optimized design and easy tool control for high uptime
    The EX-300 delivers 5 to 20% throughput improvements compared to the previous Shallow Probe LEXFAB-300 model (depending on application). Improved ergonomics allow rapid maintenance and thus optimized MTTR. The fully integrated LEXES-Pilot software provides a user-friendly interface as well as reliable factory automation.

  • See what the EX-300 can do +

  • Download documentation +

  • Scientific publications +

    A selection of publications on LEXES and Shallow Probe
    Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011

    Implantation and metrology solutions for low energy boron implant on 450mm wafers. A-S. Robbes, , K-A B-T. Meura, M-P. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940018

    Comparison of Different Characterization Techniques for Plasma Implanted Samples having Highly Doped and Shallow Implanted Layers: Dose Measurement, Profile, Etching or Deposition Characterizations.
    F. Torregrosa, C. Grosjean, N. Morel, M.P. Moret, M. Schuhmacher, Y. Depuydt, Y. Spiegel, H. Etienne, S.B. Felch, J. Duchaine, L. Roux, B. Bortolotti, R.Daineche, 18th International Conference on Ion Implantation Technology IIT 2010. AIP Conference Proceedings, Volume 1321, pp. 161-166 (2011)

    Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Loibl, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), Feb 2010

    Addressing the challenges in elemental composition, thickness determination, and dopant dosimetry from FE to BE. Mona P. Moret, Chrystel Hombourger, Francois Desse, Rabah Benbalagh, Valerie Paret, Michel Schuhmacher, Semiconductor Fabtech, 37th edition, Volume 2, June 2008

    The low energy X-ray Spectrometry technique as applied to semiconductors. Pierre-Francois Staub, Microscopy and Microanalysis, 12, 1-7, 2006

    Dopant dose metrology for ultra-shallow implanted wafers using electron-induced X-ray spectrometry at pattern-size scale.
    P.F. Staub, R. Benbalagh, F. Desse, C. Hombourger, M. Schuhmacher. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

    In-line quantitative dose metrology of ultra thin gate oxides.
    Y. Jee et al. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

    Quantitative determination of dopant dose in ultra-shallow implants using the LEXES technique. P.F. Staub, C. Hombourger, M. Schuhmacher, J. Vac. Sci. Technol. B, January 2001

    LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures.
    C. Hombourger, P.F. Staub, M. Schuhmacher, F. Desse, E. de Chambost, C. Hitzman, Proceedings of SIMS XIII, Nara, Japan, November 2001