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IMS 7f / IMS xf
High Sensitive Detection of Net Hydrogen Charged into Austenitic Stainless Steel with Secondary Ion Mass. Tohru Awane, Yoshihiro Fukushima, Takashi Matsuo, Saburo Matsuoka, Yukitaka Murakami, Shiro Miwa. Analytical Chemistry 2011, 83, 2667-2676.
SIMS analytical technique for PV applications. P. Peres, A. Merkulov, F. Desse, and M. Schuhmacher. Surface and Interface Analysis, 28 June 2010; doi: 10.1002/sia.3525.
Dynamic SIMS applications for photovoltaic technology development. A.N. Davis, P. Peres, A. Merkulov, F. Desse, S.Y. Choi, M. Schuhmacher. Microscopy and Microanalysis (2010), Cambridge University Press, 16:1392-1393, doi:10.1017/S1431927610062975
Characterisation of pebble surfaces coated with biogenic manganese oxides by SIMS, XPS and TEM. H. Seyama, Y. Tani, N. Miyata, M. Soma and K. Iwahori. App. Surf. Science 255 (2008) 1509
Dependence of the precision of Uranium isotope ratio on particle size in individual particle analysis with SIMS. F. Esaka, K. Watanabe, T. Onodera, C.-G. Lee, M. Magara, S. Sakurai and S. Usuda. App. Surf. Science 255 (2008) 1512
Challenges of biological sample preparation for SIMS imaging of elements and molecules at subcellular resolution. S. Chandra. App. Surf. Science 255 (2008) 1273
Dynamic SIMS ion microscopy imaging of individual bacterial cells for studies of isotopically labelled molecules. S. Chandra, G. Pumphrey, J. M. Abraham and E. L. Madsen. App. Surf. Science 255 (2008) 847
SIMS analysis of 83Kr implanted UO2. S. Portier, S. Brémier R. Hasnaoui, O. Bildstein and C.T. Walker. App. Surf. Science 255 (2008) 1323
SIMS characterization of segregation in InAs/GaAs heterostructures. S. Gallardo Y. Kudriatsev, A. Villegas, G. Ramírez, R. Asomoza, E. Cruz-Hernández, J.S. Rojas-Ramirez and M. López-López. App. Surf. Science 255 (2008) 1341
Towards quantitative depth profiling with high spatial and high depth resolution. N. Vanhove, P. Lievens and W. Vandervorst. App. Surf. Science 255 (2008) 1360
Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method. C. Dubois, G. Prudon, B. Gautier and J.-C. Dupuy. App. Surf. Science 255 (2008) 1377
Oxygen flooding and sample cooling during depth profiling of HfSiON thin films. S. Miwa. App. Surf. Science 255 (2008) 1384
Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film. T. Asakawa, D. Nagano, S. Denda and K. Miyairi. App. Surf. Science 255 (2008) 1387
SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions. O. Koudriavtseva, A. Morales-Acevedo, Yu. Kudriavtsev, S. Gallardo, R. Asomoza, R. Mendoza-Perez, J. Sastre-Hernandez and G. Contreras-Puente. App. Surf. Science 255 (2008) 1423
Application of SIMS analyses on oxygen transport in SOFC materials. N. Sakai, K. Yamaji, T. Horita, H. Kishimoto, M.E. Brito, H. Yokokawa and Y. Uchimoto. App. Surf. Science 252 (2006) 7045
Secondary ionization mass spectrometric analysis of impurity element isotope ratios in nuclear reactor materials. D.C. Gerlach, J.B. Cliff, D.E. Hurley, B.D. Reid, W.W. Little, G.H. Meriwether, A.J. Wickham and T.A. Simmons. App. Surf. Science 252 (2006) 7041
SIMS analysis of nitrogen in various metals and ZnO. Y. Li, S. Wang and S. P. Smith. App. Surf. Science 252 (2006) 7066
SIMS depth profiling of rubber-tyre cord bonding layers prepared using 64Zn depleted ZnO. W.S. Fulton, D.E. Sykes and G.C. Smith. App. Surf. Science 252 (2006) 7074
Back side SIMS analysis of hafnium silicate. C. Gu, F.A. Stevie, J. Bennett, R. Garcia and D.P. Griffis. App. Surf. Science 252 (2006) 7179
The reduction of the change of secondary ions yield in the thin SiON/Si system. J. Sameshima, H. Yamamoto, T. Hasegawa, T. Nishina, T. Nishitani, K. Yoshikawa and A. Karen. App. Surf. Science 252 (2006) 7190
Thermal effects on 1H and 2H distributions determined by SIMS in atomic layer deposition of HfO2 and Al2O3 using heavy water. P. Holliger, C. Hobbs, D. Jalabert, F. Martin, F. Pierre, G. Reimbold and P. Rivallin. App. Surf. Science 252 (2006) 7194
SIMS quantitative depth profiling of matrix elements in semiconductor layers. G. Guryanov, T.P. St. Clair, R. Bhat, C. Caneau, S. Nikishin, B. Borisov and A. Budrevich. App. Surf. Science 252 (2006) 7208
SIMS depth profiling of deuterium labeled polymers in polymer multilayers. S. E. Harton, F. A. Stevie, D. P. Griffis and H. Ade. App. Surf. Science 252 (2006) 7224-7227
SIMS quantification of matrix and impurity species in AlxGa1−xN. C.J. Gu, F.A. Stevie, C.J. Hitzman, Y.N. Saripalli, M. Johnson and D.P. Griffis. App. Surf. Science 252 (2006) 7228
High sensitivity analysis of atmospheric gas elements. S. Miwa, I. Nomachia and H. Kitajima. App. Surf. Science 252 (2006) 7247
SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films. H. Haneda, T. Ohgaki, I. Sakaguchi, H. Ryoken, N. Ohashi and A. Yasumori. App. Surf. Science 252 (2006) 7265
Improved automation system for the CAMECA IMS 7f. P. Peres, A. Merkulov, E. de Chambost, M. Schuhmacher, Poster for SIMS XV, Manchester, UK, September 2005
IMS 7f-GEO
Al-Mg systematics of hibonite-bearing Ca,Al-rich inclusions from Ningqiang. Weibiao HSU, Yunbin GUAN, and Ying WANG, Meteoritics & Planetary Science 46, Nr 5, 719–728 (2011)
Lunar apatite with terrestrial volatile abundances. Jeremy W. Boyce, Yang Liu, George R. Rossman, Yunbin Guan, John M. Eiler, Edward M. Stolper, & Lawrence A. Taylor, NATURE Vol 466, p. 466-468 (2010)
The effect of sulfate concentration on (sub)millimeter-scale sulfide δ34S in hypersaline cyanobacterial mats over the diurnal cycle. D. A. Fike et al, Geochem. et Cosmochem. Acta. 73, 6187 (2009)
High resolution SIMS-based sulfide δ34S: A new tool for characterizing microbial activity in a variety of depositional environments. D. Fike et al, Goldschmidt conference, June 2009
New capabilities for small-scale and high-precision SIMS analyses. J. M. Eiler, Goldschmidt conference, June 2009
Understanding the origin and diagenetic history of multiple sulfur isotope signals in late Archean sedimentary rocks. W. W. Fischer et al, American Geophysical Union, Fall Meeting 2008
Stable isotope variation along the direction of growth in echinoderm plates. T. A. Dexter, 2008 Joint Annual Meeting, Oct. 2008
SIMS measurements on oxygen isotopic compositions of chondrules and matrix in Yamato 691, EH3 chondrite. B.-G. Choi et al, Lunar Planet. Sci. XXXIX (2008)
SIMS-based approaches to understanding sulfur cycling over earth history. D. A. Fike et al, 2008 Fall meeting of the American Geophysical Union
Stable isotope variation between growth lines on the blastoid pentremites. T. A. Dexter, Geological Society of America, Southeastern section, 57th Annual meeting, April 2008
CAMECA IMS 7f-GEO: Specialized SIMS tool for geosciences. Paula Peres, Emmanuel de Chambost and Michel Schuhmacher. Applied Surface Science, Volume 255, Issue 4, 15 December 2008, pp 1472-1475
IMS Wf / SC Ultra
Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants. A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588
EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology. W.Vandervorst, R.Vos, A.J.Salima, A.Merkulov, K. Nakajimac and K.Kimura. Proceedings of the 17th International Conference on Ion Implentation Technology, IIT 2008, Monterey, CA, USA.
AIP Conf. Proc. Vol. 1066 (2008), 109-112
Semiconductor profiling with sub-nm resolution: challenges and solutions. W.Vandervorst, App. Surf. Science 255 (2008) 805
Roughness development in the depth profiling with 500eV O2 beam with the combination of oxygen flooding and sample rotation. D. Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1433
Depth profiling of ultra-thin oxynitride date dielectrics by using MCs@+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1437
Impurity measurement in silicon with D-SIMS and atom probe tomography. P.Ronsheim, App. Surf. Science 255 (2008) 1547.
SIMS depth profiling of boron ultra shallow junctions using oblique O2 beam down to 150eV. M.Juhel, F.Laugier, D.Delille,C.Wyon, L.F.T.Kwakman and M.Hopstaken, App. Surf. Science 252 (2006), 7211
Boron ultra low energy SIMS depth profiling improved by rotating stage. M.Bersani, D.Guibertoni, at al, App. Surf. Science 252 (2006) 7315
Comparison between SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. M.Bersani, D.Guibertoni, et al, App. Surf. Science 252 (2006) 7214
SIMS Depth Profiling of SiGe:C structures in test pattern areas using low energy Cs with a Cameca Wf , M.Juhel, F. Laugier, App. Surf. Science 231-232 (2004) 698
Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers. P.A.Ronsheim, R.Loesing and A.Mada, App. Surf. Science 231-232 (2004) 762
Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771
Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644
Accurate on-line depth calibration with laser interferometer during SIMS profiling experiment on the CAMECA IMS Wf instrument. O. Merkulova, A. Merkulov, M. Schuhmacher, and E. de Chambost. SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 954–958
Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953
Quadrupole SIMS
Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Noible, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), 1071-1023, Jan/Feb 2010
Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs. C.N. Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, J.L. Hoyt, IEEE Transactions on Electron Devices, Vol. 55, Issue 10, pp 2687-2694, October 2008
SIMS analysis of implanted and RTP annealed wafers for sub-100nm technology. H-U.Ehrke, A.Sears, W.Lerch, S.Paul, G.Roters, D.F.Downey, E.A.Arevalo. Paper at USJ 2003 published in JVST-B 22(1) Jan-Feb 2004
Quantification of Ge and B in SiGe using secondary ion mass spectrometry. H-U.Ehrke, H.Maul, Materials Science in Semiconductor Processing, Vol. 8, Issues 1-3, 2005, 111-114
Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resitive Si1-xGex alloy layers. M. G. Dowsett and al. Applied surface science, 9299 (2002) 1-4
Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. M. G. Dowsett et al, Phys. Rev. B 65, 113412 (2002)
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