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Quadrupole SIMS 4550 applications in semiconductors
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SiGe layer with boron spike
Abruptness of interfaces and low diffusion are key factors for device performance.
The SIMS profile of boron, taken with oxygen primary ions (1keV at normal
incidence) shows a depth resolution of 1.5nm per decade (arrow).
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Depth profiling of Arsenic in SiGe
The interference of 74GeH and 75As is resolved by proper energy filtering,
supported by excellent vacuum conditions in the CAMECA SIMS 4550.
No background subtraction applied.
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Thermal Oxynitrides
A set of six samples was prepared using two different nitridation conditions.
Two samples each were processed in a PNA-step with slightly different conditions.
SIMS parameters: oxygen sputtering at 70° impact angle with ultra low
energy (250eV). This protocol opens the door for concentration profile engineering
of Oxynitrides.
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SIMS depth profiling of low concentration phosphorus implants, repeatability
Four identical
pieces were measured to prove repeatability of the toolset and reliability
of quantification and data processing algorithms.
Measured with CAMECA SIMS 4550.
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SIMS depth profiles of ultra shallow, spike annealed B, BF2 and BF3 implants
Different implant conditions show significantly different dose loss, activated dose and junction depth after spike anneal. Analytical conditions: 250eV and 500eV oxygen primary ion beam at normal incidence.
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