IMS Wf-SC Ultra: automated magnetic sector SIMS, optimized for trace element depth profiling of Ultra-Thin structures, with high sensitivity (down to ppb atomic concentration) and high Depth Resolution. The IMS Wf handles 200 and 300mm wafer cassettes and is fully compliant with SEMI and SECS/GEM standards. Used mostly for dopant implant dose matching, junction depth measurement, process development (characterization of implant, deposition, annealing,...), failure and bulk analysis.


IMS 7f: magnetic sector SIMS for Depth Profiling with high sensitivity (down to ppb atomic concentration) and 2D or 3D imaging of trace elements. Widely used for dopant implant dose matching, junction depth measurement, process development (characterization of implant, deposition, annealing,...), failure and light element analysis. The instrument is used in silicon technology, SiGe, as well as in II-VI and III-V compounds.


SIMS 4550: quadrupole SIMS for Ultra Low Energy profiling with unsurpassed ease of use, flexibility and insulator analysis. Extremely stable for automated batch analysis. By all standards the Reference in quadrupole SIMS for next generation semiconductors.


SIMS 4600: full-wafer quadrupole SIMS for Ultra Low Energy profiling with unsurpassed ease of use, flexibility and insulator analysis. Extremely stable for automated batch analysis. In single gun, normal incidence configuration, it is the SIMS of choice for full-wafer analysis and monitoring with unattended chained operation. Main applications: Ultra shallow dose matching and junction depth.

LAWATAP: LASER-Assisted Atom Probe  allowing 3D chemical analysis of materials  with atomic spatial resolution. The analyzed volume can be as large as 100nm x 100nm x several hundreds nm. The unique femto-second LASER evaporation mode allows access to semiconductors and insulating samples, applications formerly excluded from conventional Atom Probe.