IMS 7f / 7f-GEO UNIVERSAL MAGNETIC  SECTOR SIMS

The CAMECA IMS 7f is a magnetic sector SIMS with top performances in trace element depth profiling and secondary ion microscopy.
 Its unique stigmatic optical system allows both direct ion microscopy and scanning microprobe mode.
The High Mass Resolution capability permits true elemental analysis by eliminating the numerous interfering ions (⁵⁶Fe/²⁸Si₂, ³¹P/³⁰SiH, ³²S/¹⁶O₂...). The HMR capability ensures the instrument's long life, especially in fields (semiconductors) where materials and thus analytical problems (i.e., mass interferences) change rapidly.
The magnetic sector analyzer allows to work with a high DC extraction field; accordingly, analyzer transmission is higher by two orders of magnitude than with quadrupole analyzers. High transmission is mandatory for performing analyses or profiles on small areas (ex: 50 µm test pads in semiconductor, or µm size particle analysis), while maintaining excellent detection limits (down to the ppb level).
High Mass Resolution, High Transmission and Stigmatic Optics allow the CAMECA IMS 7f to show benchmark results and application together with the highest sample throughput (sputter rates up to µm/min). 

The IMS 7f-GEO (see photo above) is a version specialized for high precision/ high throughput measurements in geological samples, i.e. REE elements or stable isotopes (H, C, O, S...). The key features of this new instrument are:
- an improved isotope ratio reproducibility (low sub-permil level),
- an improved sample throughput for stable isotopes (X10-50 compared to a IMS 7f) thanks to a new dual FC detection and a fast electro-magnetic peak switching,
- a full set of dedicated softwares. 
New IMS 7f-GEO flyer! Send an email to  to request a pdf or hard copy!

Compared to previous CAMECA IMS instruments, the IMS 7f series offers:

A more precise depth scale accuracy: obtained with a new primary ion column incorporating a precise real-time beam current monitoring.

An improved reproducibility (deep sub-percent level on implant dose measurement) using multiple hole sample holders: obtained thanks to a new secondary ion beam centering optical system and associated software.

A new PC-Windows automation and evaluation system, which increases the analysis throughput by allowing unattended, chained operation. Analyses can be run in a completely automatic mode with an excellent repeatability over hours and days. In addition, all aperture and slit movement are now motorized and computer controlled in standard. This ensures best reproducibility and allows an easier use of the instrument through memorized settings and recipes.

Dramatic improvements for shallow profiles: the impact energy can be reduced to very low level (300 eV), with independent control of the impact angle by the continuous variation of extraction voltage and primary energy. High speed of erosion (2 nm/min with 500 eV O₂⁺, 45° on silicon) can be maintained at low energy with the accel/decel optics for the duoplasmatron. A high sensitivity is now maintained at low energy even for heavy ions (cesium clusters, noble metals...) thanks to an Electron Multiplier post-acceleration.

An eucentric rotating stage reducing rugosity even on profiles from small dimension crater, at any position on the sample holder.

Ultra High Vacuum is obtained thanks to a combination of Titanium sublimation with ion or turbo-molecular pumping. UHV technology ensures excellent detection limits for light elements (H, N, C, O, ...) and becomes an important point for ultra-shallow profiling when the sputter rate is reduced at low energy.

The improved IMS 7f electron flood gun provides a unique self-compensation mode that makes it possible to measure depth profiles on complex insulating structures.

Upgrade kits are available!