In-line Tools:

Shallow Probe: High throughput Fab-line tool for composition and thickness measurements of ultra-thin structures. Full wafer mapping & product wafer analysis.
- DOPANT & IMPLANTS: USJ dopant in Si, EPI-SiGe, SOI, PLAD,
- DEPOSITED FILMS: Thickness & composition of gate oxide, oxynitride, high-k, metal, barrier and cap layers, interconnect structures.


TXRF 8300W: High throughput Fab-line tool for quantitation of trace element contamination on the surface of the semiconductor wafers. Based on non-destructive TXRF technique. Used for monitoring WAFER CLEANLINESS and METALLIC CONTAMINATION  level. The TXRF 8300W provides Full Wafer Mapping, straight TXRF and measurement of VPD (Vapor Phase Decomposition) droplets.


Near-line or through-the-wall Tools:

IMS Wf-SC Ultra: automated magnetic sector SIMS for implant dose matching, junction depth measurement, process development (characterization of implant, deposited layers, annealing,...) and failure analysis. The IMS Wf is optimized for trace element depth profiling of ultra-thin structures with high sensitivity (down to ppb atomic concentration) and high Depth Resolution.


SIMS 4600: full-wafer quadrupole SIMS for ultra shallow implant dose matching and junction depth. Ultra Low Energy dopant depth profiling with unsurpassed ease of use, flexibility and insulator analysis. Extremely stable for automated batch analysis. In single gun, normal incidence configuration, it is the SIMS of choice for full-wafer analysis and monitoring with unattended chained operation.


IMS 7f: magnetic sector SIMS for Depth Profiling with high sensitivity (down to ppb atomic concentration) and 2D or 3D imaging of trace elements. Widely used for dopant implant dose matching, junction depth measurement, process development (characterization of implant, deposition, annealing,...), failure and light element analysis.


SIMS 4550: quadrupole SIMS for Ultra Low Energy profiling with unsurpassed ease of use, flexibility and insulator analysis. Extremely stable for automated batch analysis. By all standards the Reference in quadrupole SIMS for next generation semiconductors.