Deep depth profiles with the CAMECA IMS Wf-SC Ultra

The IMS Wf-SC Ultra ensure benchmark detection limits of dopant, with an unbeatable throughput: 
- Strong extraction field for high sensitivity (low detection limits)
- Highest sample throughput with high primary beam current, optical gating and small raster size
- High Mass Resolution to remove mass interferences (P/SiH, Fe/Si2...).

III-V compound semiconductors structure

Deep phosphorous implant in silicon

MCs+ technique gives easy quantification. True depth scale is directly given by the real-time laser interferometer. Note the high dynamic range of the profile.

High Mass Resolution removes the 30SiH/31P interference, which otherwise would degrade the detection limit of phosphorous.

Arsenic implant in silicon

Reproducibility on Arsenic implant

Large dynamic range with optical gating and both Faraday Cup (for high signal) and Electron Multiplier detectors (for trace level).

Excellent reproducibility and benchmark detection limit are achieved together with a high sample throughput for dopant metrology.