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Depth Profiling

Deep and shallow depth profiling (SIMS)

In semiconductor technology, materials and thus analytical problems change rapidly. Thanks to its outstanding depth profiling capabilities, the CAMECA IMS 7f-Auto is widely used for dopant monitoring in the semiconductor industry, and applied to different species and material systems. Among its instrumental advantages: two high brightness ions sources (Cs+ and O2+), high transmission, high mass resolution…

Phosphorus in silicon depth profileExcellent detection limits for deep implants

For deep implants, depth profiles up to several microns in-depth can be analyzed within minutes, with impressive sensitivity and high dynamic range. For the three main Si dopants (B, P and As), a detection limit in the ppb range can be achieved. Opposite to TOF-SIMS, the detection limits are improved in the IMS 7f-Auto when increasing sputtering speed.

Phosphorus in silicon:
High sample throughput for deep implants. A sputter rate higher than 0.5µm/min, and a detection limit of 5x1013 at/cm3 (1ppb) are shown. High Mass Resolution is used to separate 30SiH from 31P.

Optimized depth resolution for shallow implants

ULE Depth Profiling with IMS 7fOn the CAMECA IMS 7f-Auto, the impact energy can be continuously reduced down to 500eV, providing excellent depth resolution while keeping good sensitivity. Therefore, the IMS 7f-Auto can be used for characterizing the in-depth distribution of dopants and impurities on shallow implanted samples or thin layer structures.

Ultra shallow implant technology:
ultra low energy (O2+ 500V) depth profiling
 for investigation on annealing conditions




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